<p>In this work, design, simulation and comparative analysis of a novel Negative Capacitance FET (NCFET), Carbon Nanotube FET (CNTFET), FinFET and CMOS based astable multivibrator (AMV) and a current starved astable multivibrator (CSAMV) have been done. A performance comparison of the proposed circuits is made using variations in resistance, capacitance, temperature, and supply voltage (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10470_2025_2347_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="33" /> </InlineMediaObject> <EquationSource Format="TEX">\( V_{DD} \)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>V</mi> <mrow> <mi mathvariant="italic">DD</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>) using HSPICE simulations. Most of the performance parameters are improved in the case of NCFET based CSAMV. An increase of 1.03% in the amplitude of output square wave in CNTFET-AMV when compared with FinFET-AMV was observed. A significant increase in the maximum frequency was achieved by 216% in NCFET-CSAMV compared with FinFET-AMV. The maximum frequency achieved is 220&#xa0;MHz in the case of NCFET-CSAMV. It was also observed that NCFET-AMV Starts to function appropriately at 0.08&#xa0;V compared to FinFET-AMV, which starts to function appropriately at 0.39&#xa0;V. The average power dissipation was 2.41 times higher in FinFET-CSAMV than in NCFET-CSAMV. The average power consumed is a little higher in the case of NCFET-CSAMV than CMOS-AMV. Still, it can be overcome if the circuit is operated at a lower <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10470_2025_2347_Article_IEq2.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="33" /> </InlineMediaObject> <EquationSource Format="TEX">\( V_{DD} \)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>V</mi> <mrow> <mi mathvariant="italic">DD</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>.</p>

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Design, simulation and comparative analysis of a novel NCFET based astable multivibrator and a current starved astable multivibrator

  • Mohd Yasir,
  • Naushad Alam

摘要

In this work, design, simulation and comparative analysis of a novel Negative Capacitance FET (NCFET), Carbon Nanotube FET (CNTFET), FinFET and CMOS based astable multivibrator (AMV) and a current starved astable multivibrator (CSAMV) have been done. A performance comparison of the proposed circuits is made using variations in resistance, capacitance, temperature, and supply voltage ( \( V_{DD} \) V DD ) using HSPICE simulations. Most of the performance parameters are improved in the case of NCFET based CSAMV. An increase of 1.03% in the amplitude of output square wave in CNTFET-AMV when compared with FinFET-AMV was observed. A significant increase in the maximum frequency was achieved by 216% in NCFET-CSAMV compared with FinFET-AMV. The maximum frequency achieved is 220 MHz in the case of NCFET-CSAMV. It was also observed that NCFET-AMV Starts to function appropriately at 0.08 V compared to FinFET-AMV, which starts to function appropriately at 0.39 V. The average power dissipation was 2.41 times higher in FinFET-CSAMV than in NCFET-CSAMV. The average power consumed is a little higher in the case of NCFET-CSAMV than CMOS-AMV. Still, it can be overcome if the circuit is operated at a lower \( V_{DD} \) V DD .