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Design and simulation of a low-power, universal & multi-mode filter for the commercial FM band in 20-nm CNFETs

  • S. Mohammadali Zanjani,
  • Pouya Toghian

摘要

This paper presents a new biquad filter based on carbon nanotube field-effect transistor (CNFET) technology. Implementing various filter modes (high-pass, low-pass, band-pass, and band-stop) in four operating modes (voltage, current, transconductance, and transresistance) with a unified circuit structure is the fundamental feature of the proposed filter. The proposed universal filter is intended for commercial radio communications in the FM band to reduce power consumption and chip area occupation. The proposed circuit can adjust a wide frequency range and thus cover multiple radio channels with minimum noise and distortion on the signal. The proposed filter in 20 nm technology has been simulated using advanced design system (ADS) software to investigate the effects of high-frequency effects. The minimum power consumption is 360 nW, with a supply voltage of 0.9 V, with the ability to independently adjust the center frequency (22 MHz < f0 < 120 MHz) and filter quality factor (0.6 < Q < 23) and the use of grounded capacitors to absorb parasitic effects are among the advantages of the proposed circuit. The proposed Gm-C circuit has the highest figure of merit (FOM) value of 318.5. Moreover, its resistance to process variations, power supply, and temperature changes demonstrates the appropriate performance of the proposed filter.