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<p>Through-silicon via (TSV) is an important technique in three-dimension integration. The mechanical performance of TSV-Cu is critical to the electrical performance and signal transmission. In this work, the deformation of single-crystalline TSV-Cu during annealing process was studied using molecular dynamics method. The protrusion morphology and protrusion height of Cu column were revealed. The protrusion height curves can be divided into four stages: slow increase, fast increase, fast decrease, and saturation. During the deformation process, the main deformation mode is temporary amorphous region followed by residual dislocations. The influences of annealing temperatures, heating rates, and column sizes on protrusion height were studied. Results show that the residual protrusion height increases with increasing annealing temperatures and decreasing heating rates. The residual protrusion height increases with increasing column sizes in terms of column diameter and length. This work provides new insights into understanding the mechanical performance of nano-TSV-Cu.</p>

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Molecular Dynamics Simulations of Single-Crystalline TSV-Cu Deformation Under Thermal Loads

  • 期刊论文

  • 发表日期：

    2025年3月26日

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  • Feizhou Li,
  • Chuanlong Xu,
  • Xiaobao Tian,
  • Wentao Jiang,
  • Qingyuan Wang,
  • Zhiyong Huang,
  • Haidong Fan

摘要

Through-silicon via (TSV) is an important technique in three-dimension integration. The mechanical performance of TSV-Cu is critical to the electrical performance and signal transmission. In this work, the deformation of single-crystalline TSV-Cu during annealing process was studied using molecular dynamics method. The protrusion morphology and protrusion height of Cu column were revealed. The protrusion height curves can be divided into four stages: slow increase, fast increase, fast decrease, and saturation. During the deformation process, the main deformation mode is temporary amorphous region followed by residual dislocations. The influences of annealing temperatures, heating rates, and column sizes on protrusion height were studied. Results show that the residual protrusion height increases with increasing annealing temperatures and decreasing heating rates. The residual protrusion height increases with increasing column sizes in terms of column diameter and length. This work provides new insights into understanding the mechanical performance of nano-TSV-Cu.