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Athyrium yokoscense, a cadmium-hypertolerant fern, exhibits two cadmium stress mitigation strategies in its roots and aerial parts

  • Yuko Ukai,
  • Hiroki Taoka,
  • Manaka Kamada,
  • Yuko Wakui,
  • Fumiyuki Goto,
  • Kazuyoshi Kitazaki,
  • Tomoko Abe,
  • Akiko Hokura,
  • Toshihiro Yoshihara,
  • Hiroaki Shimada

摘要

Athyrium yokoscense is hypertolerant to cadmium (Cd) and can grow normally under a high Cd concentration despite Cd being a highly toxic heavy metal. To mitigate Cd stress in general plant species, Cd is promptly chelated with a thiol compound and is isolated into vacuoles. Generated active oxygen species (ROS) in the cytoplasm are removed by reduced glutathione. However, we found many differences in the countermeasures in A. yokoscense. Thiol compounds accumulated in the stele of the roots, although a long-term Cd exposure induced Cd accumulation in the aerial parts. Synchrotron radiation-based X-ray fluorescence (SR-XRF) analysis indicated that a large amount of Cd was localized in the cell walls of the roots. Overexpression of AyNramp5a, encoding a representative Fe and Mn transporter of A. yokoscense, increased both Cd uptake and Fe and Mn uptake in rice calli under the Cd exposure conditions. Organic acids are known to play a key role in reducing Cd availability to the plants by forming chelation and preventing its entry in free form into the roots. In A. yokoscense roots, Organic acids were abundantly detected. Investigating the chemical forms of the Cd molecules by X-ray absorption fine structure (XAFS) analysis detected many compounds with Cd-oxygen (Cd-O) binding in A. yokoscense roots, whereas in the aerial parts, the ratio of the compounds with Cd-sulfur (Cd-S) binding was increased. Together, our results imply that the strong Cd tolerance of A. yokoscense is an attribute of the following two mechanisms: Cd-O compound formation in the cell wall is a barrier to reduce Cd uptake into aerial parts. Thiol compounds in the region of root stele are involved in detoxication of Cd by formation of Cd-S compounds.