Scholarlink

<p>Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits <i>via</i> all-solution processing techniques. Herein, we report a new four-armed diazo-based oligomer photo-crosslinker <b>2DPP4N</b><sub><b>2</b></sub> for the patterning of semiconducting polymers by UV light-induced crossing-linking reaction. After blending <b>2DPP4N</b><sub><b>2</b></sub> with polymer semiconductors such as <b>PDPP4T</b> (p-type), <b>PDPP3T</b> (ambipolar) and <b>N2200</b> (n-type), we prepared various patterns with a resolution of 6 µm by irradiating through a photo-mask with 254 nm UV light for 160 s. Notably, the interchain packing and surface morphology remained nearly unchanged after photo-patterning, as characterized by atomic force microscopy (AFM) and grazing incidence wide-angle X-ray scattering (GIWAXS). Consequently, the charge transport property of the patterned thin film was largely maintained in comparison to that of its pristine thin film. These results reveal that <b>2DPP4N</b><sub><b>2</b></sub> is a viable and promising candidate for application in all-solution-processable flexible integrated electronic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Efficient Photo-patterning of Polymer Semiconductors with a Four-armed Diazo-based Oligomer Cross-linker

  • 期刊论文

  • 发表日期：

    2026年1月22日

查看全文
  • Chang-Chun Wu,
  • Jia-Feng Dong,
  • Kai-Yuan Chenchai,
  • Liang-Liang Chen,
  • Tian-Yu Shi,
  • Jun-Long Ma,
  • Zi-Meng Li,
  • Jian-Hong Zhao,
  • Hong-Jun Zang,
  • Guan-Xin Zhang,
  • De-Qing Zhang

摘要

Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques. Herein, we report a new four-armed diazo-based oligomer photo-crosslinker 2DPP4N2 for the patterning of semiconducting polymers by UV light-induced crossing-linking reaction. After blending 2DPP4N2 with polymer semiconductors such as PDPP4T (p-type), PDPP3T (ambipolar) and N2200 (n-type), we prepared various patterns with a resolution of 6 µm by irradiating through a photo-mask with 254 nm UV light for 160 s. Notably, the interchain packing and surface morphology remained nearly unchanged after photo-patterning, as characterized by atomic force microscopy (AFM) and grazing incidence wide-angle X-ray scattering (GIWAXS). Consequently, the charge transport property of the patterned thin film was largely maintained in comparison to that of its pristine thin film. These results reveal that 2DPP4N2 is a viable and promising candidate for application in all-solution-processable flexible integrated electronic devices.