Scholarlink

<p>Low dielectric constant (low-<i>k</i>) materials are critical for advanced packaging in high-density microelectronic devices and high-frequency communication technologies. Ladder polysiloxanes, which are characterized by their unique double-chain structure and intrinsic microporosity, offer remarkable advantages in terms of thermal stability, oxidation resistance, and dielectric performance. However, structural defects in ladder polysiloxanes, such as cage-like and irregular oligomers, and their effects on dielectric properties remain underexplored. In this study, a series of ladder-like polysiloxanes (<b>X-TMS</b>) with diverse side groups weresynthesized <i>via</i> a one-step base-catalyzed method. The influence of the benzocyclobutene (BCB) side groups on the formation of regular ladder structures was systematically investigated. Notably, BCB incorporation disrupted the structural regularity, favoring the formation of cage-like and irregular topologies, which were extensively characterized using <sup>29</sup>silicon nuclear magnetic resonance spectroscopy (<sup>29</sup>Si-NMR), Fourier transform infrared spectroscopy (FTIR), gel permeation chromatography (GPC), and X-ray diffraction (XRD). These structural defects were beneficial for improving the hydrophobicity and thermal stability. Copolymerization of X-TMS with commercial DVS-BCB resins further enhanced the mechanical properties, with the elastic modulus increasing from 3.6 GPa to 4.4 GPa and water absorption reduced from 0.33 wt% to 0.06 wt%. This study establishes a clear correlation between topological structures and material properties. These findings not only advance the understanding of the structure-property relationships in ladder polysiloxanes but also provide a novel approach for designing high-performance interlayer dielectric materials for next-generation microelectronics.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Topological Design of Low Dielectric Ladder-like Polysilsesquioxane and Copolymers

  • 期刊论文

  • 发表日期：

    2025年2月13日

查看全文
  • Wen-Jie Fan,
  • Meng Xie,
  • Jin-Feng Tian,
  • Yan He,
  • Shuang Xia,
  • Wen-Xin Fu

摘要

Low dielectric constant (low-k) materials are critical for advanced packaging in high-density microelectronic devices and high-frequency communication technologies. Ladder polysiloxanes, which are characterized by their unique double-chain structure and intrinsic microporosity, offer remarkable advantages in terms of thermal stability, oxidation resistance, and dielectric performance. However, structural defects in ladder polysiloxanes, such as cage-like and irregular oligomers, and their effects on dielectric properties remain underexplored. In this study, a series of ladder-like polysiloxanes (X-TMS) with diverse side groups weresynthesized via a one-step base-catalyzed method. The influence of the benzocyclobutene (BCB) side groups on the formation of regular ladder structures was systematically investigated. Notably, BCB incorporation disrupted the structural regularity, favoring the formation of cage-like and irregular topologies, which were extensively characterized using 29silicon nuclear magnetic resonance spectroscopy (29Si-NMR), Fourier transform infrared spectroscopy (FTIR), gel permeation chromatography (GPC), and X-ray diffraction (XRD). These structural defects were beneficial for improving the hydrophobicity and thermal stability. Copolymerization of X-TMS with commercial DVS-BCB resins further enhanced the mechanical properties, with the elastic modulus increasing from 3.6 GPa to 4.4 GPa and water absorption reduced from 0.33 wt% to 0.06 wt%. This study establishes a clear correlation between topological structures and material properties. These findings not only advance the understanding of the structure-property relationships in ladder polysiloxanes but also provide a novel approach for designing high-performance interlayer dielectric materials for next-generation microelectronics.