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<p>A novel self-powered ultraviolet (UV) photodetector (PD) based on a CuI/MgZnO heterojunction modified by an ultrathin Cu<sub>2</sub>O layer has been fabricated by the successive ionic layer adsorption and reaction (SILAR) method. Compared with the CuI/MgZnO self-powered PD, the optimised heterojunction PD (CuI/Cu<sub>2</sub>O/MgZnO) exhibits significantly improved self-powered properties. Under 325&#xa0;nm UV light at an intensity of 450&#xa0;µW/cm<sup>2</sup>, the CuI/Cu<sub>2</sub>O/MgZnO heterojunction PD shows exceptional photoelectric performance, featuring a high photo-to-dark current ratio of 1611, a large responsivity of 48.43&#xa0;mA/W, and rapid rise and decay times of 261&#xa0;ms and 890&#xa0;ms, respectively, without any external power supply. Incorporating the Cu<sub>2</sub>O interface layer results in notable enhancements in responsivity and detectivity compared to the heterojunction without the Cu<sub>2</sub>O layer. This improvement is attributed to heterojunction interface contact, energy band engineering, and the tunneling effect. The Cu<sub>2</sub>O layer expands the depletion zone and promotes charge separation. Due to its thinness, charges can tunnel through the Cu<sub>2</sub>O layer from one metal electrode to another. Furthermore, the interfacial Cu<sub>2</sub>O layer can alter the valence band offset and the conduction band offset of the p-CuI/n-MgZnO junction, enhancing carrier transport between MgZnO and CuI. These results lay the groundwork for using self-powered MgZnO-based heterojunction photodetectors in light-based devices in the future. They also demonstrate the potential of designing novel heterojunctions to create high-performance self-powered PDs for UV detection.</p>

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High-performance self-powered ultraviolet photodetector based on CuI/MgZnO heterojunction with interfacial engineering by Cu2O

  • 期刊论文

  • 发表日期：

    2025年3月2日

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  • Yue Zhu,
  • Yanhua Qu

摘要

A novel self-powered ultraviolet (UV) photodetector (PD) based on a CuI/MgZnO heterojunction modified by an ultrathin Cu2O layer has been fabricated by the successive ionic layer adsorption and reaction (SILAR) method. Compared with the CuI/MgZnO self-powered PD, the optimised heterojunction PD (CuI/Cu2O/MgZnO) exhibits significantly improved self-powered properties. Under 325 nm UV light at an intensity of 450 µW/cm2, the CuI/Cu2O/MgZnO heterojunction PD shows exceptional photoelectric performance, featuring a high photo-to-dark current ratio of 1611, a large responsivity of 48.43 mA/W, and rapid rise and decay times of 261 ms and 890 ms, respectively, without any external power supply. Incorporating the Cu2O interface layer results in notable enhancements in responsivity and detectivity compared to the heterojunction without the Cu2O layer. This improvement is attributed to heterojunction interface contact, energy band engineering, and the tunneling effect. The Cu2O layer expands the depletion zone and promotes charge separation. Due to its thinness, charges can tunnel through the Cu2O layer from one metal electrode to another. Furthermore, the interfacial Cu2O layer can alter the valence band offset and the conduction band offset of the p-CuI/n-MgZnO junction, enhancing carrier transport between MgZnO and CuI. These results lay the groundwork for using self-powered MgZnO-based heterojunction photodetectors in light-based devices in the future. They also demonstrate the potential of designing novel heterojunctions to create high-performance self-powered PDs for UV detection.