Studying the suppression of quantum well intermixing in primary epitaxial wafers via oxygen ion bombardment

In the pursuit of creating non-absorption window (NAW) structures in high-power semiconductor laser cavities, techniques like impurity-free vacancy diffusion and rapid thermal annealing induced quantum well intermixing were employed. The challenge is to induce a desired 30 nm blue shift while safeguarding the gain-emitting region from high-temperature annealing O²⁻ bombardment effectively inhibits quantum well mixing, as demonstrated through experiments. Epitaxial wafers subjected to this treatment exhibit just a 1 nm blue shift, compared to 32 nm without O²⁻ bombardment. These findings provide essential insights for protecting the gain-emitting region during NAW structure fabrication.