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<p>Copper bismuthate (CuBi<sub>2</sub>O<sub>4</sub>) is a visible-light-responsive <i>p</i>-type semiconductor with significant potential for photoelectrochemical solar energy conversion, although its performance is limited by rapid charge recombination and poor interfacial charge transfer. In this work, a BiVO<sub>4</sub>/CuBi<sub>2</sub>O<sub>4</sub> <i>p–n</i> heterojunction photocathode was fabricated via electrodeposition on FTO conductive substrates to enhance interfacial charge separation and transport. XRD and Raman analyses confirmed the coexistence of BiVO<sub>4</sub> and CuBi<sub>2</sub>O<sub>4</sub> crystalline phases, while SEM and EDS revealed the morphology and homogeneous elemental distribution of the heterostructure. In an inert electrolyte, photoelectrochemical measurements revealed a significant enhancement in cathodic photocurrent density (− 121 µA cm⁻²) compared to pristine CuBi<sub>2</sub>O<sub>4</sub> (− 78 µA cm⁻²), accompanied by reduced charge-transfer resistance and improved interfacial kinetics, as evidenced by electrochemical impedance spectroscopy. Furthermore, the heterojunction exhibited a prolonged charge-carrier lifetime (36&#xa0;s), indicating suppressed electron–hole recombination. These results are attributed to the formation of a type II band alignment at the BiVO<sub>4</sub>/CuBi<sub>2</sub>O<sub>4</sub> interface, which promotes efficient spatial separation of charge carriers. This study demonstrates that electrodeposited BiVO<sub>4</sub>/CuBi<sub>2</sub>O<sub>4</sub> heterojunctions are a promising strategy to enhance photocathode performance for solar energy conversion.</p>

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Enhanced cathodic photocurrent in electrodeposited n-BiVO4/p-CuBi2O4 heterojunction photocathodes for solar energy conversion

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月10日

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  • Paulo S. R. Meneses,
  • Antônio G. R. Costa,
  • Luzia R. Santos,
  • Rayza B. Lima,
  • Idglan S. Lima,
  • Francisco Eroni Santos,
  • Isolda Costa,
  • Rejane M. P. Silva,
  • Reginaldo S. Santos

摘要

Copper bismuthate (CuBi2O4) is a visible-light-responsive p-type semiconductor with significant potential for photoelectrochemical solar energy conversion, although its performance is limited by rapid charge recombination and poor interfacial charge transfer. In this work, a BiVO4/CuBi2O4 p–n heterojunction photocathode was fabricated via electrodeposition on FTO conductive substrates to enhance interfacial charge separation and transport. XRD and Raman analyses confirmed the coexistence of BiVO4 and CuBi2O4 crystalline phases, while SEM and EDS revealed the morphology and homogeneous elemental distribution of the heterostructure. In an inert electrolyte, photoelectrochemical measurements revealed a significant enhancement in cathodic photocurrent density (− 121 µA cm⁻²) compared to pristine CuBi2O4 (− 78 µA cm⁻²), accompanied by reduced charge-transfer resistance and improved interfacial kinetics, as evidenced by electrochemical impedance spectroscopy. Furthermore, the heterojunction exhibited a prolonged charge-carrier lifetime (36 s), indicating suppressed electron–hole recombination. These results are attributed to the formation of a type II band alignment at the BiVO4/CuBi2O4 interface, which promotes efficient spatial separation of charge carriers. This study demonstrates that electrodeposited BiVO4/CuBi2O4 heterojunctions are a promising strategy to enhance photocathode performance for solar energy conversion.