Comprehensive computational investigation for exploring physical properties of mechanically stable layered chalcogenides X2CdSe4 (X = Ga, Tl) for optoelectronic applications
摘要
The Ruddlesden–Popper (RP) chalcogenides are considered to be excellent materials for use in efficient photovoltaic and optoelectronic devices. In this manuscript, the structural, mechanical, electronic, bond stiffness, and optical and vibrational properties of X2CdSe4 (X = Ga, Tl) are examined. The structural optimization and occurrence of the negative cohesive energy ensure their structural stability. The positive elastic constants confirm their mechanical stability from 0 to 10 GPa. These chalcogenides are noticed to be semiconductor because of the significant direct energy bandgap of 2.73 eV and 2.13 eV using TB-mBJ and 2.67 eV and 1.99 eV using TB-mBJ + SOC for Ga2CdSe4 and Tl2CdSe4, respectively. PDOS unveils major contribution of Ga-s, Tl s/d, Cd-d, and Se-p orbitals towards improvement of their electronic performance. Comparatively, Tl2CdSe4 exhibits the lowest effective mass presenting greater carrier mobility. As their relative stiffness is greater than
In this ab initio study, all calculations are made by the full potential linearly augmented plane wave (FP-LAPAW) technique in purview of the density functional theory (DFT)-based WIEN2K simulation code. The band structure is calculated while using the TB-mBJ and TB-mBJ + SOC functional. Voigt-Reuss-Hill approximation is utilized to seek mechanical stability where elastic constants obey Born’s criterion. Kramers–Kronig relations have been used to explore optical properties. The density functional perturbation theory (DFPT) is employed to determine the vibrational behavior of the lattice atoms.