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<p>Among the intrinsic defects in the wide band-gap β-Ga<sub>2</sub>O<sub>3</sub> semiconductor, the Ga vacancy defects are often invoked to explain the observed electrical compensation in n-type conductive substrates and thin films. In β-Ga<sub>2</sub>O<sub>3</sub>, we have two nonequivalent Ga sites characterized by tetrahedral and octahedral coordinated oxygen first neighbors and thus in principle at least two distinct Ga vacancy defects which both have been predicted to be deep acceptors. Vacancy defects are generally generated in a controlled way by particle irradiation (electrons, protons, ions) and ion implantation. Indeed, Ga vacancy-related defects with spin <i>S</i> = 1/2 and <i>S</i> = 1 have been detected and investigated by electron paramagnetic resonance spectroscopy after such treatments. More recently, Ga vacancies with modified properties have also been evidenced after high-temperature annealing. In this review, we will discuss the experimental and computational results concerning these defects and show some still unresolved questions.</p>

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Ga Vacancy Defects in β-Ga2O3: Recent Advances and Open Questions

  • 期刊论文

  • 发表日期：

    2026年7月28日

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  • H. J. von Bardeleben,
  • U. Gerstmann

摘要

Among the intrinsic defects in the wide band-gap β-Ga2O3 semiconductor, the Ga vacancy defects are often invoked to explain the observed electrical compensation in n-type conductive substrates and thin films. In β-Ga2O3, we have two nonequivalent Ga sites characterized by tetrahedral and octahedral coordinated oxygen first neighbors and thus in principle at least two distinct Ga vacancy defects which both have been predicted to be deep acceptors. Vacancy defects are generally generated in a controlled way by particle irradiation (electrons, protons, ions) and ion implantation. Indeed, Ga vacancy-related defects with spin S = 1/2 and S = 1 have been detected and investigated by electron paramagnetic resonance spectroscopy after such treatments. More recently, Ga vacancies with modified properties have also been evidenced after high-temperature annealing. In this review, we will discuss the experimental and computational results concerning these defects and show some still unresolved questions.