<p>The research of the contact vibration characteristics of piezoelectric semiconductors is crucial for the realization and optimization of functions such as energy conversion and signal sensing. This investigation analyzes the axisymmetric dynamic response of a semi-infinite piezoelectric semiconductor medium under localized loading from a spherical rigid indenter. Through the use of perturbation techniques and Hankel integral transformations, the dynamic contact pressure distribution and contact displacement are derived. Additionally, the dynamic contact stiffness (DCS) is obtained based on displacement boundary conditions. The numerical analysis section explores the effects of factors such as vibration frequency, contact displacement, internal friction coefficient, piezoelectric effect, semiconductor effect, and material constants on the DCS factor. The results show that the presence of the piezoelectric and semiconductor effects increases the contact stiffness of piezoelectric semiconductor materials and accelerates energy dissipation. Compared to the piezoelectric constant and carrier concentration, the elastic constant has a more significant impact on the DCS factor. The findings provide a theoretical foundation for the mechanical response of piezoelectric semiconductor materials in practical contact and vibration environments and offer valuable references for optimizing their performance and applications.</p>