<p>This paper addresses the generalized electromagnetothermoelastic problem for a homogeneous and isotropic thin circular semiconductor. We consider the non-local heat conduction equation due to the miniaturization of modern electronic devices and the prevalent use of ultrashort lasers in environments with extremely high-temperature gradients, along with the presence of a primary electromagnetic field. We assume that while heat propagation exhibits non-local properties, deformation behaves locally. The curved surface of the semiconductor is subjected to an exponentially time-dependent thermal and mechanical load. We employ a finite difference method utilizing the Crank–Nicolson implicit scheme to solve the governing coupled linear equations of hyperbolic type for extremely short-time actions and small microstructured sizes. Our study investigates the impact of the chemical concentration and the physical field variables of the diffusive material to predict the thermoelastic behavior within the nanostructured semiconducting medium. We present numerical computations of the chemical concentration, temperature distribution, chemical potential, deformation, and stress components for fixed values of physical parameters. The results indicate that the non-local parameter significantly smooths out sudden changes in thermal and stress gradients. The phase-lag parameters associated with heat flux and temperature gradient both have finite-speed thermal wave propagation and account for thermal inertia effects. These mechanisms collectively contribute to a reduction in surface resistance. Such factors are essential for precisely capturing ultrashort thermoelastic responses under rapid thermal loading, enabling improved predictions of material behavior in extreme conditions. These findings are crucial for designing and processing nanoelectromechanical systems (NEMS).</p>