Thickness size effect on fracture behavior of piezoelectric semiconductor strip

The study of finite size stress concentration in the design and implementation of piezoelectric semiconductor devices is crucial. A symmetric collinear cracks model is established for piezoelectric semiconductor with finite thickness dimensions. Considering two boundary conditions of stress and displacement, the dislocation density functions are introduced to obtain the distribution of the stress, carrier density, current density intensity and electric displacement. Two singular integral equation systems on which the boundary value problem depends are derived and solved numerically. Expressions for stress intensity factors, current density intensity factors and energy release rates are given. The results indicate that the distribution of current density, carrier density and electric displacement are all affected by the doping concentration of piezoelectric semiconductor. Mechanical load and electric load can affect the stress intensity factor and the current density intensity factor, which reflects that the existence of mechanical load and electric load can accelerate or slow down the growth of crack.