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<p>On-chip inductors implemented using regular metal stacking suffer from low inductance and poor Q-factor at millimeter-wave frequencies. In this work, an adjacent stacked zigzag polygonal inductor is developed in TSMC 180 nm technology. At 30 GHz, it provides an inductance of 700.6 pH with a Q-factor of 33.65, and FOM of 27.6. The inductor design shows improved Q compared to recent works while maintaining a compact footprint. To verify practical applicability, an LC band-pass filter based on the proposed inductor is designed, exhibiting an insertion loss of 0.35 dB, a return loss of 35 dB, and a noise figure of 0.33 dB. These results indicate that the proposed structure is suitable for compact, high-frequency 5&#xa0;G RF front-end applications.</p>

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An area-efficient high-Q adjacent stack zigzag-polygonal on- chip inductor using customized metal stacking in TSMC 180-nm technology

  • 期刊论文

  • 发表日期：

    2026年7月23日

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  • Naveen Manchala,
  • Bheema Rao Nistala

摘要

On-chip inductors implemented using regular metal stacking suffer from low inductance and poor Q-factor at millimeter-wave frequencies. In this work, an adjacent stacked zigzag polygonal inductor is developed in TSMC 180 nm technology. At 30 GHz, it provides an inductance of 700.6 pH with a Q-factor of 33.65, and FOM of 27.6. The inductor design shows improved Q compared to recent works while maintaining a compact footprint. To verify practical applicability, an LC band-pass filter based on the proposed inductor is designed, exhibiting an insertion loss of 0.35 dB, a return loss of 35 dB, and a noise figure of 0.33 dB. These results indicate that the proposed structure is suitable for compact, high-frequency 5 G RF front-end applications.