Scholarlink

<p>Carbon Nanotube Thin Film Transistors (CNT-TFTs) have emerged as promising alternatives to silicon TFTs for flexible and ultra-thin electronic applications due to their superior carrier mobility, mechanical flexibility, and low-temperature processing capability. However, device performance strongly depends on nanotube physical parameters such as tube length, orientation, and network density. This work aims to design, model, and optimize CNT-TFT devices using the NanoNet simulation platform and analyze the influence of nanotube parameters on drain current performance for flexible display applications. A nanonet-based drift-diffusion model was used to simulate CNT-TFT devices under varying channel lengths (0.1–10&#xa0;μm), nanotube densities (15–45 tubes/µm²), and orientations (30°, 60°, and 90°). Current transport and scaling behavior were analyzed under short-channel and long-channel operating modes. The optimized CNT-TFT device achieved a maximum drain current of 1.3 µA, which is consistent with reported CNT-TFT performance ranges. The results show that drain current strongly depends on the LS/LC ratio rather than individual tube length. Short-channel operation provides significantly higher current. Optimal performance was achieved at nanotube orientations of 30° and 60° and network density below 40 tubes/µm². The results confirm that CNT-TFT devices offer excellent current performance and scalability for flexible electronics and display driver applications. The study provides important design guidelines for optimizing CNT-TFT fabrication and improving device performance.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Application of CNT nanotechnology to explore ultra-thin devices with flexible transistors

  • 期刊论文

  • 发表日期：

    2026年6月23日

查看全文
  • R. Venkatesan,
  • N. Ragavi,
  • B. Ithayapriya

摘要

Carbon Nanotube Thin Film Transistors (CNT-TFTs) have emerged as promising alternatives to silicon TFTs for flexible and ultra-thin electronic applications due to their superior carrier mobility, mechanical flexibility, and low-temperature processing capability. However, device performance strongly depends on nanotube physical parameters such as tube length, orientation, and network density. This work aims to design, model, and optimize CNT-TFT devices using the NanoNet simulation platform and analyze the influence of nanotube parameters on drain current performance for flexible display applications. A nanonet-based drift-diffusion model was used to simulate CNT-TFT devices under varying channel lengths (0.1–10 μm), nanotube densities (15–45 tubes/µm²), and orientations (30°, 60°, and 90°). Current transport and scaling behavior were analyzed under short-channel and long-channel operating modes. The optimized CNT-TFT device achieved a maximum drain current of 1.3 µA, which is consistent with reported CNT-TFT performance ranges. The results show that drain current strongly depends on the LS/LC ratio rather than individual tube length. Short-channel operation provides significantly higher current. Optimal performance was achieved at nanotube orientations of 30° and 60° and network density below 40 tubes/µm². The results confirm that CNT-TFT devices offer excellent current performance and scalability for flexible electronics and display driver applications. The study provides important design guidelines for optimizing CNT-TFT fabrication and improving device performance.