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<p>In this paper, the electronic behavior of 375&#xa0;nm average-thickness two-dimensional WS<sub>2</sub>, MoS<sub>2</sub>, and (WS<sub>2</sub>/MoS<sub>2</sub>) hybrid nanocomposite thin films was investigated. The films were prepared via pulsed laser deposition (PLD) on vulcanized RTV-800 silicone rubber substrates. X-ray diffraction (XRD) was used to identify the crystalline phases of the deposited films, and field-emission scanning electron microscopy (FESEM) and high-resolution atomic force microscopy (AFM) were used to characterize their surface morphology. The results demonstrate that Sample S3 (WS<sub>2</sub> 60%/MoS<sub>2</sub> 40%) represents the optimal composition, exhibiting the highest electrical conductivity of 7.911 <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\times\)</EquationSource> </InlineEquation> 10<sup>–6</sup> S/cm and a carrier concentration of 1.45 <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\times\)</EquationSource> </InlineEquation> 10<sup>11</sup> cm<sup>–3</sup>. Morphological analysis via AFM showed a controlled RMS roughness of 60.38&#xa0;nm. Under bending strain testing, the hybrid films exhibited a stable electromechanical response, with a normalized resistance change of ∆<i>R/R</i><sub><i>o</i></sub> = 66.01 at a minimum bending radius of 7.81&#xa0;mm. Moreover, all films showed a decrease in normalized resistance change under bending strain as the percent MoS<sub>2</sub> increased, indicating the formation of stronger conductive pathways. Such outcomes demonstrate the promise of MoS<sub>2</sub>-doped WS<sub>2</sub>-based hybrid nanocomposites for semi-flexible electronic circuits and strain-tolerant device applications.</p> Graphical abstract <p></p>

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Development of 2D (WS2/MoS2) hybrid nanocomposites for semi-flexible electronic circuits via pulsed laser deposition on RTV-800 silicone rubber substrates

  • 期刊论文

  • 发表日期：

    2026年3月26日

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  • A. H. Abbas,
  • S. Z. Mortazavi,
  • A. Reyhani,
  • M. H. Almaamori,
  • M. R. Khanlary

摘要

In this paper, the electronic behavior of 375 nm average-thickness two-dimensional WS2, MoS2, and (WS2/MoS2) hybrid nanocomposite thin films was investigated. The films were prepared via pulsed laser deposition (PLD) on vulcanized RTV-800 silicone rubber substrates. X-ray diffraction (XRD) was used to identify the crystalline phases of the deposited films, and field-emission scanning electron microscopy (FESEM) and high-resolution atomic force microscopy (AFM) were used to characterize their surface morphology. The results demonstrate that Sample S3 (WS2 60%/MoS2 40%) represents the optimal composition, exhibiting the highest electrical conductivity of 7.911 \(\times\) 10–6 S/cm and a carrier concentration of 1.45 \(\times\) 1011 cm–3. Morphological analysis via AFM showed a controlled RMS roughness of 60.38 nm. Under bending strain testing, the hybrid films exhibited a stable electromechanical response, with a normalized resistance change of ∆R/Ro = 66.01 at a minimum bending radius of 7.81 mm. Moreover, all films showed a decrease in normalized resistance change under bending strain as the percent MoS2 increased, indicating the formation of stronger conductive pathways. Such outcomes demonstrate the promise of MoS2-doped WS2-based hybrid nanocomposites for semi-flexible electronic circuits and strain-tolerant device applications.

Graphical abstract