Label-free biosensing enhancement and performance analysis using III-V(AlGaAsSb/InGaAs) heterojunction vertical nanowire TFETs
摘要
This work investigates the performance and simulation of a Vertical Nanowire Tunnel Field-Effect Transistor (VNW-TFET) implemented with an III-V compound semiconductor material, including an in-built nanocavity. Biosensing will be the focus of the application, and key parameters related to several biomolecules, such as streptavidin, APTES, cellulose, DNA, and gelatin with different dielectric constants, will be compared here. These biomolecules are integrated inside a nanocavity near the gate terminal of the device to detect changes in the drain current according to the corresponding gate voltages. This paper discusses the influence of such biomolecules on the drain current, Subthreshold Swing (SS), Energy band (