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<p>This study investigates the impact of alternatively incorporated ZnO, Si and ZnCdTe layers in the active region of the device, a finding that has not been previously reported in detail. The performance of the Quantum-well based hetero-structure ZnO/Si/ZnCdTe PIN photo-detector has been explained and compared to its GaN/Si/InGaAs counterpart in UV-Visible-NIR wavelength region. The Nonlinear Quantum Modified Drift-Diffusion (QM-D-D) model is employed for electro-optical characteristic studies in the devices, which find application in UV-Visible-NIR detection. The results indicate that the designed hetero-structure ZnO/Si/ZnCdTe PIN photo-detector offers higher external quantum efficiency and photo-responsivity compared to its GaN/Si/InGaAs counterpart in UV-Visible-NIR wavelength region. The noise reduction in the designed photo-detector makes it more suitable for use as low-noise photon detectors. Furthermore, the study evaluates the suitability of 3 × 5 array-based photo-detectors in terms of photo responsivity and external/internal quantum efficiency. The validity of the indigenously developed QM-D-D model is confirmed through experimental verification. In addition, failure analysis and fabrication feasibility of the new class of designed PIN photo-detector is presented in this paper. To the best of the authors’ knowledge, this is the first report on quantum-well based hetero-structure ZnO/Si/ZnCdTe PIN photo-detector which can be used to detect the photon in UV through Visible to NIR range of EM spectrum.</p>

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Enhanced quantum efficiency in novel ZnO/Si/ZnCdTe material based hetero-structure PIN photo-detector for UV-Visible-NIR applications: A comparative study of GaN/Si/InGaAs structure

  • 期刊论文

  • 发表日期：

    2026年5月13日

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  • Moumita Chakraborty,
  • Debabrata Raha,
  • Rupanwita Das Mahapatra,
  • Jesmin Zakaria,
  • Trilochan Patra,
  • Arnab Das Sarma,
  • Abhijit Kundu,
  • Moumita Mukherjee

摘要

This study investigates the impact of alternatively incorporated ZnO, Si and ZnCdTe layers in the active region of the device, a finding that has not been previously reported in detail. The performance of the Quantum-well based hetero-structure ZnO/Si/ZnCdTe PIN photo-detector has been explained and compared to its GaN/Si/InGaAs counterpart in UV-Visible-NIR wavelength region. The Nonlinear Quantum Modified Drift-Diffusion (QM-D-D) model is employed for electro-optical characteristic studies in the devices, which find application in UV-Visible-NIR detection. The results indicate that the designed hetero-structure ZnO/Si/ZnCdTe PIN photo-detector offers higher external quantum efficiency and photo-responsivity compared to its GaN/Si/InGaAs counterpart in UV-Visible-NIR wavelength region. The noise reduction in the designed photo-detector makes it more suitable for use as low-noise photon detectors. Furthermore, the study evaluates the suitability of 3 × 5 array-based photo-detectors in terms of photo responsivity and external/internal quantum efficiency. The validity of the indigenously developed QM-D-D model is confirmed through experimental verification. In addition, failure analysis and fabrication feasibility of the new class of designed PIN photo-detector is presented in this paper. To the best of the authors’ knowledge, this is the first report on quantum-well based hetero-structure ZnO/Si/ZnCdTe PIN photo-detector which can be used to detect the photon in UV through Visible to NIR range of EM spectrum.