Design and optimization of a SAW sensor at high temperatures using Pt-SiO2 IDTs
摘要
This paper proposes and investigates a structure designed by patterning the SiO2 film over the (0°, 138.5°, 26.6°) cut langasite (LGS) substrate. The results are compared with those obtained with a langasite resonator designed without the SiO2 film. The proposed structure is investigated at elevated temperatures up to 1000 °C using a 3-D finite element method. The proposed structure is optimised for the lowest temperature coefficient of frequency (TCF) and high coupling factor (k2) as a function of SiO2 film thickness for the operating temperature range. The optimised structure reduces the TCF 26.20 ppm/°C at 1000 °C. An enhanced coupling factor of 0.0414% is obtained for the optimised structure at 1000 °C temperature compared to the conventional structure. Thus, the systematically optimised structure may be selected to realise a temperature sensor which can perform at elevated temperatures.