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<p>In Radio Frequency Microelectromechanical Systems (RF MEMS) switches, cantilever beams of metals or alloys creep over time, degrading reliability and lifetime. Here, we propose a novel cantilever beam chamfering design strategy to mitigate creep without altering the material or the fundamental structure. Based on creep parameters of the cantilever beam material, we systematically investigated RF MEMS switches with various chamfer designs using the COMSOL platform. The simulation results show that chamfering alters the stress distribution and shifts the location of maximum creep strain in the cantilever beam, greatly reducing creep. After 1 × 10<sup>7</sup> seconds at 303&#xa0;K, the creep deformation in the linear chamfer was only 63.5% of that in the unchamfered beam, extending lifetime by nearly 4.5×. Simultaneously, we developed a theoretical model that elucidates how chamfer affects creep. Finally, experimental validation of the arc chamfer design under various temperature and beam-thickness conditions showed excellent agreement with simulation predictions, confirming the accuracy of the simulations. This work provides a foundation for future optimization of cantilever beam geometries in RF MEMS switches to further enhance long-term reliability and lifetime.</p>

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Controlling creep in RF MEMS switch cantilever beams via chamfering

  • 期刊论文

  • 发表日期：

    2026年2月20日

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  • Jiangtao Wei,
  • Yulong Zhang,
  • Zewen Liu

摘要

In Radio Frequency Microelectromechanical Systems (RF MEMS) switches, cantilever beams of metals or alloys creep over time, degrading reliability and lifetime. Here, we propose a novel cantilever beam chamfering design strategy to mitigate creep without altering the material or the fundamental structure. Based on creep parameters of the cantilever beam material, we systematically investigated RF MEMS switches with various chamfer designs using the COMSOL platform. The simulation results show that chamfering alters the stress distribution and shifts the location of maximum creep strain in the cantilever beam, greatly reducing creep. After 1 × 107 seconds at 303 K, the creep deformation in the linear chamfer was only 63.5% of that in the unchamfered beam, extending lifetime by nearly 4.5×. Simultaneously, we developed a theoretical model that elucidates how chamfer affects creep. Finally, experimental validation of the arc chamfer design under various temperature and beam-thickness conditions showed excellent agreement with simulation predictions, confirming the accuracy of the simulations. This work provides a foundation for future optimization of cantilever beam geometries in RF MEMS switches to further enhance long-term reliability and lifetime.