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<p>Kesterite-based solar cells are gaining attention as next-generation photovoltaics because of their earth-abundant elements, low cost, and environmentally safe composition. Despite these advantages, their practical efficiency has remained below 12.6%, largely due to intrinsic defects and recombination losses. To overcome these limitations, this work explores a multiple quantum well (MQW) design in Copper–Zinc–Germanium–Sulfide/Selenide (CZGS/Se) absorbers with the inclusion of a silicon back surface field (BSF) layer. Through device simulations, we systematically analyze carrier recombination pathways, optical absorption enhancement, and their influence on electrical output. The proposed MQW-BSF configuration exhibits strong carrier confinement and suppression of recombination at the rear interface. Under idealized conditions with perfect interfaces and no defect states, the device achieves a simulated power conversion efficiency of 31.8%. When realistic defect densities are considered, the efficiency remains at 23.5%, which is still significantly higher than conventional kesterite devices. These findings suggest that BSF-assisted MQW structures offer a promising route for advancing low-cost, high-efficiency, and sustainable thin-film solar cells.</p>

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Performance enhancement of quantum well photosensitive device: role of Silicon in Copper–Zinc–Germanium–Sulfide/Selenide

  • 期刊论文

  • 发表日期：

    2025年9月15日

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  • A. Benisha Chris,
  • Anoushka Lenka,
  • Soumyaranjan Routray

摘要

Kesterite-based solar cells are gaining attention as next-generation photovoltaics because of their earth-abundant elements, low cost, and environmentally safe composition. Despite these advantages, their practical efficiency has remained below 12.6%, largely due to intrinsic defects and recombination losses. To overcome these limitations, this work explores a multiple quantum well (MQW) design in Copper–Zinc–Germanium–Sulfide/Selenide (CZGS/Se) absorbers with the inclusion of a silicon back surface field (BSF) layer. Through device simulations, we systematically analyze carrier recombination pathways, optical absorption enhancement, and their influence on electrical output. The proposed MQW-BSF configuration exhibits strong carrier confinement and suppression of recombination at the rear interface. Under idealized conditions with perfect interfaces and no defect states, the device achieves a simulated power conversion efficiency of 31.8%. When realistic defect densities are considered, the efficiency remains at 23.5%, which is still significantly higher than conventional kesterite devices. These findings suggest that BSF-assisted MQW structures offer a promising route for advancing low-cost, high-efficiency, and sustainable thin-film solar cells.