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<p>In this paper, a highly responsive label-free biosensor based upon a Dielectrically Modulated Dual Metal Gate Heterostructure Tunnel Field-Effect Transistor (DM-DMG-HTFET) architecture was proposed. The DM-DMG-HTFET biosensor is designed for the detection of biomolecules such as Gluten (K = 5), Zein (K = 7) and DNA (K = 8.7) by enclosing them in the dielectric-filled cavities incorporated into the gate source overlap region. The advantage of dual-metal gate increases the electrostatic control of the channel while simultaneously increasing the ON-state current and the sensitivity. Additionally, by utilizing an extended gate, it also decouples the sensing interface with the channel that equally enhances stability and flexibility. Device performance has been evaluated using Silvaco ATLAS TCAD simulations with respect to varying cavity length, cavity thickness, occupancy factor, and operating temperature. The sensor provides significantly enhanced sensitivity for both neutral and charged biomolecules. Moreover, the low subthreshold swing (SS) of 28.98 mV/decade and peak sensitivity (SIDS) of 2.85 × 10<sup>4</sup> confirming the design has a high design efficiency. Based on the above properties, the proposed DM-DMG-HTFET biosensor provides enhanced sensitivity and sensor detection capabilities than conventional biosensors.</p>

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Performance assessment of dielectrically modulated dual metal gate Ge/Si heterostructure TFET for detection of biomolecules: as a biosensor

  • 期刊论文

  • 发表日期：

    2025年8月19日

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  • M. Pavan Kumar,
  • Srinivasa Rao Karumuri,
  • Ch. V. Ravi Sankar,
  • K. L. V. Ramana Kumari,
  • P. Harika,
  • Rapolu Anil Kumar,
  • Girija Sravani Kondavitee

摘要

In this paper, a highly responsive label-free biosensor based upon a Dielectrically Modulated Dual Metal Gate Heterostructure Tunnel Field-Effect Transistor (DM-DMG-HTFET) architecture was proposed. The DM-DMG-HTFET biosensor is designed for the detection of biomolecules such as Gluten (K = 5), Zein (K = 7) and DNA (K = 8.7) by enclosing them in the dielectric-filled cavities incorporated into the gate source overlap region. The advantage of dual-metal gate increases the electrostatic control of the channel while simultaneously increasing the ON-state current and the sensitivity. Additionally, by utilizing an extended gate, it also decouples the sensing interface with the channel that equally enhances stability and flexibility. Device performance has been evaluated using Silvaco ATLAS TCAD simulations with respect to varying cavity length, cavity thickness, occupancy factor, and operating temperature. The sensor provides significantly enhanced sensitivity for both neutral and charged biomolecules. Moreover, the low subthreshold swing (SS) of 28.98 mV/decade and peak sensitivity (SIDS) of 2.85 × 104 confirming the design has a high design efficiency. Based on the above properties, the proposed DM-DMG-HTFET biosensor provides enhanced sensitivity and sensor detection capabilities than conventional biosensors.