Scholarlink

<p>The rapid proliferation of Internet of Things (IoT) and portable electronic devices necessitates ultralow-power, high-efficiency circuit architectures. Conventional silicon CMOS technology faces fundamental scaling limitations, requiring novel device solutions for next-generation analog and mixed-signal applications. This work introduces a nanostructured Tunnel Field-Effect Transistor (NTFET) optimization framework, integrating quasi-one-dimensional (1D) graphene nanoribbons (GNRs) and MoS<sub>2</sub> to exploit steep-slope band-to-band tunneling (BTBT), high carrier mobility, and superior electrostatic gate control. The proposed approach is applied to the design of Multi-Input Operational Transconductance Amplifiers (MIOTAs) and evaluated against conventional CMOS OTAs in terms of gain, bandwidth, power efficiency, and transient response. A Verilog-A analytical transport model for MoS<sub>2</sub> TFETs is implemented in Cadence/Spectre to ensure precise device-to-circuit co-design analysis, and the NTFET device characteristics are simulated using Silvaco TCAD tool to accurately model quantum tunneling effects, charge transport behavior, and electrostatic control. Simulation results confirm that GNRFET-based MIOTAs achieve a&#xa0;42% increase in DC gain, a 70% enhancement in gain-bandwidth product (GBWP), and a <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="542_2025_5933_Article_IEq3.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="25" /> </InlineMediaObject> <EquationSource Format="TEX">\(\:5\times\:\)</EquationSource> </InlineEquation> reduction in energy-delay product (EDP) compared to CMOS OTAs while operating at sub-0.5&#xa0;V supply voltage. Additionally, slew rate, phase margin, and common-mode rejection ratio (CMRR) exhibit substantial improvements, validating the efficacy of TFET-based MIOTAs in energy-efficient, highspeed signal processing applications. The findings highlight nanoengineered TFETs as a promising alternative to conventional transconductance circuits, offering a scalable, power-efficient solution for loT, biomedical sensing, and next-generation mixed-signal computing platforms.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Nanostructured tunnel field-effect transistors (NTFETs) for ultralow-power internet of things (IoT) devices: design optimization using quasi-one-dimensional graphene nanoribbons

  • 期刊论文

  • 发表日期：

    2025年8月23日

查看全文
  • Seema Rajput,
  • Ankur Beohar

摘要

The rapid proliferation of Internet of Things (IoT) and portable electronic devices necessitates ultralow-power, high-efficiency circuit architectures. Conventional silicon CMOS technology faces fundamental scaling limitations, requiring novel device solutions for next-generation analog and mixed-signal applications. This work introduces a nanostructured Tunnel Field-Effect Transistor (NTFET) optimization framework, integrating quasi-one-dimensional (1D) graphene nanoribbons (GNRs) and MoS2 to exploit steep-slope band-to-band tunneling (BTBT), high carrier mobility, and superior electrostatic gate control. The proposed approach is applied to the design of Multi-Input Operational Transconductance Amplifiers (MIOTAs) and evaluated against conventional CMOS OTAs in terms of gain, bandwidth, power efficiency, and transient response. A Verilog-A analytical transport model for MoS2 TFETs is implemented in Cadence/Spectre to ensure precise device-to-circuit co-design analysis, and the NTFET device characteristics are simulated using Silvaco TCAD tool to accurately model quantum tunneling effects, charge transport behavior, and electrostatic control. Simulation results confirm that GNRFET-based MIOTAs achieve a 42% increase in DC gain, a 70% enhancement in gain-bandwidth product (GBWP), and a \(\:5\times\:\) reduction in energy-delay product (EDP) compared to CMOS OTAs while operating at sub-0.5 V supply voltage. Additionally, slew rate, phase margin, and common-mode rejection ratio (CMRR) exhibit substantial improvements, validating the efficacy of TFET-based MIOTAs in energy-efficient, highspeed signal processing applications. The findings highlight nanoengineered TFETs as a promising alternative to conventional transconductance circuits, offering a scalable, power-efficient solution for loT, biomedical sensing, and next-generation mixed-signal computing platforms.