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<p>In this work, the material characteristics of AlN and Ga<sub>2</sub>O<sub>3</sub> have been exploited to develop a high-performance, AlN/Ga<sub>2</sub>O<sub>3</sub> heterostructure semiconductor device to handle high-power and RF/microwave electronics applications of today’s requirement. AlN is a highly polarized ultra-wide bandgap semiconductor with a bandgap of 6.2&#xa0;eV and excellent thermal conductivity. Conversely, β-Ga<sub>2</sub>O<sub>3</sub>, with a bandgap of 4.9&#xa0;eV, is recognized as a stable ultra-wide bandgap semiconductor that is particularly well-suited for power electronics applications. However, it faces limitations such as low thermal conductivity, difficulties in achieving p-type doping, and a high density of bulk defects. However, the potential advantages of AlN and challenges of β-Ga<sub>2</sub>O<sub>3</sub> can be combined by growing thin epitaxial layer of AlN over β-Ga<sub>2</sub>O<sub>3</sub> to achieve high performance power electronic devices. The high 2DEG density (1.395 × 10<sup>14</sup>&#xa0;cm<sup>−2</sup>) at the heterointerface of AlN/β-Ga<sub>2</sub>O<sub>3</sub> and DC and RF characteristics up to 2&#xa0;kV show the high-voltage and high-power handling capability of the device and 600&#xa0;GHz cut-off frequency makes it suitable for RF/microwave applications. Unlike previous studies that report isolated performance metrics, our work presents a comprehensive analysis of barrier thickness tuning (10–100&#xa0;nm), correlating it with DC, RF, and 2DEG characteristics. This provides deeper insight into optimization strategies for AlN/β-Ga₂O₃ HEMT design—a novel contribution to the current body of knowledge.</p>

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A novel AlN/β-Ga2O3 high electron mobility transistor with 2 kV and 600 GHz operation

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年8月12日

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  • Trupti R. Lenka,
  • Tanjim Rahman,
  • Mano B. S. Muthu,
  • Injamamul H. Emu,
  • Hieu P. T. Nguyen

摘要

In this work, the material characteristics of AlN and Ga2O3 have been exploited to develop a high-performance, AlN/Ga2O3 heterostructure semiconductor device to handle high-power and RF/microwave electronics applications of today’s requirement. AlN is a highly polarized ultra-wide bandgap semiconductor with a bandgap of 6.2 eV and excellent thermal conductivity. Conversely, β-Ga2O3, with a bandgap of 4.9 eV, is recognized as a stable ultra-wide bandgap semiconductor that is particularly well-suited for power electronics applications. However, it faces limitations such as low thermal conductivity, difficulties in achieving p-type doping, and a high density of bulk defects. However, the potential advantages of AlN and challenges of β-Ga2O3 can be combined by growing thin epitaxial layer of AlN over β-Ga2O3 to achieve high performance power electronic devices. The high 2DEG density (1.395 × 1014 cm−2) at the heterointerface of AlN/β-Ga2O3 and DC and RF characteristics up to 2 kV show the high-voltage and high-power handling capability of the device and 600 GHz cut-off frequency makes it suitable for RF/microwave applications. Unlike previous studies that report isolated performance metrics, our work presents a comprehensive analysis of barrier thickness tuning (10–100 nm), correlating it with DC, RF, and 2DEG characteristics. This provides deeper insight into optimization strategies for AlN/β-Ga₂O₃ HEMT design—a novel contribution to the current body of knowledge.