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<p>This research examines the reliability of Ferroelectric Field Effect Transistors (FeFETs) under electrical stress on memory window performance. Comparative analysis of Single-Metal Gate FeFETs (SMG-FeFETs) and Dual-Metal Gate FeFETs (DMG-FeFETs) was performed using well calibrated simulation deck. The DMG-FeFET architecture showed a 21% increase in memory window over standard SMG-FeFET structures. Moreover, the DMG-FeFET architecture demonstrates better stability through multiple reliability figures, such as temperature fluctuation, trap energy levels, interface trap density, and integration bias time. Engineering of work function in the DMG-FeFET brings about a step potential profile with screening gate protecting the degradation in the memory window from drain-induced detrapping effects by shielding the channel effectively under long integration times. These results evince superior reliability of DMG-FeFETs especially applicable to automotive electronics, industrial control systems, IoT devices, and embedded non-volatile memories where stable performance across different operating conditions is a necessity.</p>

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On the reliability of HfO2-based FeFETs for memory applications

  • 期刊论文

  • 发表日期：

    2025年9月17日

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  • Debojyoti Roy,
  • Khushwant Sehra,
  • Manoj Saxena

摘要

This research examines the reliability of Ferroelectric Field Effect Transistors (FeFETs) under electrical stress on memory window performance. Comparative analysis of Single-Metal Gate FeFETs (SMG-FeFETs) and Dual-Metal Gate FeFETs (DMG-FeFETs) was performed using well calibrated simulation deck. The DMG-FeFET architecture showed a 21% increase in memory window over standard SMG-FeFET structures. Moreover, the DMG-FeFET architecture demonstrates better stability through multiple reliability figures, such as temperature fluctuation, trap energy levels, interface trap density, and integration bias time. Engineering of work function in the DMG-FeFET brings about a step potential profile with screening gate protecting the degradation in the memory window from drain-induced detrapping effects by shielding the channel effectively under long integration times. These results evince superior reliability of DMG-FeFETs especially applicable to automotive electronics, industrial control systems, IoT devices, and embedded non-volatile memories where stable performance across different operating conditions is a necessity.