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<p>The organic field-effect transistor exhibits specific characteristics, including channel thickness, ON-current, OFF-current, subthreshold swing, threshold voltage, and turn-on voltage. These characteristics are influenced by the fabrication process. Designing and understanding OFT-based circuits requires knowledge of these parameters. Using the Silvaco TCAD tool, an OFET with palladium source/drain electrodes, NdTaNO dielectric material, a pentacene active layer, and an aluminum gate electrode was simulated. The device's performance parameters, such as drain current, threshold voltage, and subthreshold slope, were analyzed for channel thicknesses ranging from 10 to 100&#xa0;nm. Overall improvement in Ion and Vth was observed with decreasing channel thickness (t<sub>ch</sub>). Fabrication-related issues like de-wetting, tensile strain, and compressive stress in organic semiconductor films, which are related to device channel thickness, were considered to enhance OFET lifetime. These issues arise when the OSC thickness is very small or very large, decreasing device lifetime and circuit performance. Optimal device conditions and satisfactory operational behavior were achieved at thicknesses of 50&#xa0;nm and 60&#xa0;nm. These values represent the optimal t<sub>ch</sub> requirements for OFET fabrication.</p>

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Performance analysis of nanoscale organic field-effect transistors with respect to different device parameters

  • 期刊论文

  • 发表日期：

    2025年7月11日

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  • T. Sikhamani,
  • Deepak Kumar Panda,
  • Pratikhya Raut

摘要

The organic field-effect transistor exhibits specific characteristics, including channel thickness, ON-current, OFF-current, subthreshold swing, threshold voltage, and turn-on voltage. These characteristics are influenced by the fabrication process. Designing and understanding OFT-based circuits requires knowledge of these parameters. Using the Silvaco TCAD tool, an OFET with palladium source/drain electrodes, NdTaNO dielectric material, a pentacene active layer, and an aluminum gate electrode was simulated. The device's performance parameters, such as drain current, threshold voltage, and subthreshold slope, were analyzed for channel thicknesses ranging from 10 to 100 nm. Overall improvement in Ion and Vth was observed with decreasing channel thickness (tch). Fabrication-related issues like de-wetting, tensile strain, and compressive stress in organic semiconductor films, which are related to device channel thickness, were considered to enhance OFET lifetime. These issues arise when the OSC thickness is very small or very large, decreasing device lifetime and circuit performance. Optimal device conditions and satisfactory operational behavior were achieved at thicknesses of 50 nm and 60 nm. These values represent the optimal tch requirements for OFET fabrication.