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<p>In this article, a novel recessed bridge-gate engineered quaternary In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N/GaN HEMT is proposed for emerging electronics applications. The In content is fixed to 5% and Al content to 27.5% to create two-dimensional electron gas (2DEG) at the heterointerface of In<sub>0.05</sub>Al<sub>0.275</sub>GaN/GaN. The 2DEG created at the heterointerface is of the order of 10<sup>13</sup>&#xa0;cm<sup>−2</sup>. The device has undergone analysis of DC characteristics and small-signal AC characteristics using Silvaco TCAD simulations. The DC characteristics result in threshold voltage of −1&#xa0;V, and saturated drain current of 0.37 A/mm. Lattice heat thermal modeling is carried out with the DC characteristics to understand the device behavior during self-heating effects. The RF characteristics obtained from AC simulations include cut-off frequency (f<sub>t</sub>) of 8&#xa0;GHz and maximum frequency of oscillation (f<sub>max</sub>) of 30&#xa0;Hz. Maximum stable gain (Gms) up to 50&#xa0;GHz is obtained where the HEMT is unconditionally stable. The proposed HEMT is suitable for power electronics and RF applications.</p>

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Lattice heat flow thermal modeling of recessed bridge-gate InAlGaN/GaN HEMT

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年6月5日

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  • Tanjim Rahman,
  • Trupti Ranjan Lenka,
  • Mano Bala Sankar Muthu,
  • Injamamul Hoque Emu,
  • Uriel Ramirez,
  • Hieu Pham Trung Nguyen

摘要

In this article, a novel recessed bridge-gate engineered quaternary InxAlyGa1-x-yN/GaN HEMT is proposed for emerging electronics applications. The In content is fixed to 5% and Al content to 27.5% to create two-dimensional electron gas (2DEG) at the heterointerface of In0.05Al0.275GaN/GaN. The 2DEG created at the heterointerface is of the order of 1013 cm−2. The device has undergone analysis of DC characteristics and small-signal AC characteristics using Silvaco TCAD simulations. The DC characteristics result in threshold voltage of −1 V, and saturated drain current of 0.37 A/mm. Lattice heat thermal modeling is carried out with the DC characteristics to understand the device behavior during self-heating effects. The RF characteristics obtained from AC simulations include cut-off frequency (ft) of 8 GHz and maximum frequency of oscillation (fmax) of 30 Hz. Maximum stable gain (Gms) up to 50 GHz is obtained where the HEMT is unconditionally stable. The proposed HEMT is suitable for power electronics and RF applications.