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<p>An accurate model has been developed to estimate the capacitance of a micromachined ultrasonic transducer (MUT) featuring silicon nitride (Si<sub>3</sub>N<sub>4</sub>) insulated cells with circular diaphragms composed of silicon carbide (SiC). An analytical model of a cell was assessed, taking into account the presence of air within the cavity. This model accounts for both active and passive capacitances as well as fringing field capacitances because of its nanoscale dimension. Its accuracy has been verified through comparison of its capacitance values with finite element method (FEM) outcomes for various geometric configurations. The total device capacitance was determined as 0.48904 pF, a critical parameter for the device's operation. The resonant frequency is determined at 2.8404&#xa0;MHz, with a corresponding membrane displacement of 334.64&#xa0;nm. This model has the potential to improve the precision of design approaches for MUT devices and other capacitive sensors based on microelectromechanical systems (MEMS) technology with circular diaphragms. Stress and strain analyses are also conducted to ensure the device operates without mechanical failure.</p>

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Enhanced capacitance modeling of a circular microelectromechanical system based transducer for sensitivity improvement

  • 期刊论文

  • 发表日期：

    2025年3月31日

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  • Bijit Kumar Nath,
  • Reshmi Maity,
  • Shankar Dutta,
  • Niladri Pratap Maity

摘要

An accurate model has been developed to estimate the capacitance of a micromachined ultrasonic transducer (MUT) featuring silicon nitride (Si3N4) insulated cells with circular diaphragms composed of silicon carbide (SiC). An analytical model of a cell was assessed, taking into account the presence of air within the cavity. This model accounts for both active and passive capacitances as well as fringing field capacitances because of its nanoscale dimension. Its accuracy has been verified through comparison of its capacitance values with finite element method (FEM) outcomes for various geometric configurations. The total device capacitance was determined as 0.48904 pF, a critical parameter for the device's operation. The resonant frequency is determined at 2.8404 MHz, with a corresponding membrane displacement of 334.64 nm. This model has the potential to improve the precision of design approaches for MUT devices and other capacitive sensors based on microelectromechanical systems (MEMS) technology with circular diaphragms. Stress and strain analyses are also conducted to ensure the device operates without mechanical failure.