Power-enhancement mode high electron mobility avalanche transit time (HEMATT) oscillators at THz region: a study on electro-optical characteristics

This paper reports power enhancement mode HEMATT diodes optimized for THz switching applications. This has been achieved by introducing Graphene plates in the cathode region of the proposed device. The comprehensive study compares the electrical and electro-optical characteristics of single and 3 × 3 array type device configurations. For the first time, quantum models have been developed for design and optimization of this new class of devices. Significant improvement in the output power is observed in comparison to the conventional GaN/AlGaN HEMATT devices. In addition to this, it is observed that photoresponsivity enhances by ~ 200% due to introducing Graphene as the cathode plate material. The observations are compared with experimental reports to establish the validity of the design. To the best of authors' knowledge, this is the first ever study report on power-enhancement mode in 2DEG IMPATTs for application in high-speed THz data-communication systems.