Impact of capacitance and linearity on the reliability of InGaN notch based dual channel GaN MOSHEMTs for precision biosensing

In this proposed work, the effect of capacitance and linearity were extensively analyzed on the performance of dual-channel (DC) AlGaN/GaN MOSHEMTs for improved sensitivity and reliability with suppressed inter modulation distortion under dynamic operating conditions. A thin layer of InGaN notch embedded between the GaN channel and buffer improves the device linearity by suppressing higher-order harmonics for reliable device characterization. Moreover, the effect of capacitance with the applied gate and drain bias is explored to optimize the device for high-frequency applications. The entire simulation was performed through Sentaurus TCAD simulator. The peak drain current of 3.35 A/mm and transconductance of 28 mS/mm are achieved for Uricase (k = 1.5) (biomolecule) and starts to decrease for high permittivity biomolecules. The simulation results clearly validates the role of InGaN notch in improving the linearity and reliability of DC AlGaN/GaN MOSHEMTs for high-sensitivity label-free biosensing.