High-K dielectric-modulated dual-cavity MOSHEMT with III–V nitride GaN/AlGaN semiconductors: application as biosensor

In this paper, the authors developed a novel detection technique based on a dielectric modulated-dual cavity metal–oxide–semiconductor high electron mobility transistor (DMDC-MOSHEMT) using high-K material for fast, precise, and reliable detection. The effect of high-K materials on the performance and behavior of dual cavity MOSHEMT-based biosensors is investigated. In two dimensional electron gas (2DEG), the use of high-K material reduces off-current and enhances carrier confinement. As a result, the current generation of devices has been improved. Silvaco Atlas is used for numerical modeling. The simulation is used to investigate various performance parameters and compare them to SiO₂ MOSHEMT-based biosensors which is useful for detection of biomolecules. Experimental observation is used to verify and validate the proposed model. The use of high-K materials in AlGaN/GaN dual cavity MOSHEMT biosensors for effective label-free biomolecule detection is described for the first time in this article. Using high- K materials, AlGaN/GaN MOSHEMTs are excellent candidates for biosensor fabrication. The variation of AlGaN barrier layer thickness and Al content in AlGaN barrier layer are studied for getting better drain-on-sensitivity and threshold voltage sensitivity of biosensor.