Biomolecule identification using superlattice AlGaN/GaN high-K MOSHEMT: a cutting-edge biosensing technique

This paper presents biomolecule identification process using a novel biosensing technique with high-K metal–oxide–semiconductor high electron mobility transistor (MOSHEMT). The authors have simulated a MOSHEMT device with high-K dielectric material to improve the sensitivity of biosensors. High-K dielectric material is utilized to examine the electrical efficacy of MOSHEMT-based biosensors. When high-K materials are used, two-dimensional electron gas (2DEG) benefits from carrier confinement and leakage current reduction. Therefore, the on-current of the device has been increased. For numerical modeling, TCAD Silvaco Atlas is used. For label-free identification of biomolecules, simulator is used to investigate and compare various performance parameters with SiO₂ MOSHEMT. Experimental evidence verifies the accuracy of the model. According to the authors' knowledge, this is the first investigation on high-K dielectric AlGaN/GaN MOSHEMT biosensors for efficient label-free biomolecule detection. AlGaN/GaN MOSHEMTs, which use a high-K material, are found to be promising for use in biosensors.