Metal gate work function engineering for nano-scaled trigate FinFET

Diminution of leakage current is essential for the semiconductor device operating in the nanometer regime. This paper aims to analyse the consequence of metal work function on drain current, including leakage current. Gate-induced drain leakage (GIDL) is one of the critical parameters, and it is explored separately from the drain current in the nano-scaled fin-structured field effect transistor (FinFET). The analytical model is established to observe the influence of work function on drain current as well as GIDL. This paper also discusses doping concentration, vertical and lateral electric fields, and surface potential to model GIDL. In band-to-band tunnelling, electrons tunnel into drain owing to vertical electric field. Henceforth, change of the vertical electric field with gate potential with donor concentration is also studied. The transfer characteristics and transconductance \(\left( {g_{m} } \right)\) $\left(g_m\right)$ of device are also observed. The Y-parameter is extracted from the drain current \(\left( {I_{d} } \right)\) $\left(I_d\right)$ which is based on LambertW function and \(g_{m}\) $g_m$ . The model is examined for hafnium oxide (HfO₂) and silicon dioxide (SiO₂). The analytical model is validated by TCAD simulation.