Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs

This article proposes a detailed investigation of the dependence of mobility on source (S)/drain (D) doping concentrations, temperature and interface traps in two architectures of gate-all-around (GAA) FinFETs. Single core gate-all-around (SC-GAA) and dual core S/D gate-all-around (DC-GAA) FinFETs are considered with four cases of mobility in the technology computer-aided design (TCAD) simulation based investigation. A sensitivity parameter in terms of drain current is defined to assess the deviation of the models under examination from reference models. The constant mobility model is used as a reference mobility model to compute the sensitivity for Masetti and Philips unified mobility models. On the other hand, for Masetti and Philips unified mobility models accompanied by high field saturation and mobility degradation (E-normal) model, the devices with high field saturation and mobility degradation (E-normal) model are used as reference. The impact of interface traps on the device performance is reported for the four cases of mobility through the sensitivity parameter. Both acceptor-like and donor-like interface traps are considered at the oxide–semiconductor interface having Gaussian distribution. The sensitivity is reported for peak energy position and trap concentration for the four cases of mobility.