Design and analysis of logic circuits based on 8 nm double gate MOSFET

This paper proposed an 8 nm N-type Double Gate MOSFET with improved characteristics. A comparative study has been done based on substrate and oxide material. The substrate and oxide material combination is Si-SiO₂, SiGe-HfO₂. This study discussed about which channel and oxide material is performed with better efficiency in sub-micron dimension in terms of I_off, I_on, I_on/I_off, Threshold Voltage (V_th), Sub-threshold Swing (SS) and Drain-Induced-Barrier-Lowering (DIBL) to obtain energy efficient and high performance circuits. All parameters are validated according to the IRDS-2020 and compare with existing literature. Based on improved performance SiGe material has been chosen for circuit level applications. In this research all the basic gates (NOT, AND, OR, XOR, XNOR) as well as universal gates (NAND, NOR) along with their performance with respect to Propagation Delay, Short Circuit power dissipation, Dynamic power dissipation, Power Delay Product (PDP), Energy Delay Product (EDP) and Noise Margin have been explored at 1 Volt supply voltage. These findings suggest that the proposed device is a suitable candidate to design high speed and low power logic circuits.