The work reported in this paper describes the design and simulation of a novel current mirror readout circuit based MOSFET integrated cantilever structure for micro-gram ( \(\mu\) g) mass sensing applications. The proposed mass sensing structure consist of silicon cantilever as the micromechanical structure, MOSFET as strain sensing element and current mirror as a readout circuit. In this paper, studies have been carried out on three structures (a) n-channel MOSFET based resistive loaded current mirror integrated cantilever mass sensor (b) p-channel MOSFET based resistive loaded current mirror integrated cantilever mass sensor and (c) n- and p- channel MOSFETs based dual current mirror integrated cantilever mass sensor. The input MOSFET(s) of the current mirror acts as the reference transistor(s) while the output MOSFET(s) of the mirror circuit acts as strain sensing element(s) to measure the cantilever deflection under externally applied load. The structural and the electrical characteristics of the sensors were simulated using COMSOL Multiphysics and TSPICE software respectively. Simulation results showed a sensitivity of 21.89 \(\mu\) V/ \(\mu\) g, 1 \(\mu\) V/ \(\mu\) g and 115.57 \(\mu\) V/ \(\mu\) g for nMOS, pMOS and dual channel cantilever mass sensor. The fabrication steps and mask layout of the proposed sensor have also been presented in this paper. The novelty of this work is emphasized by the innovative integration of a CMOS current mirror circuit with a cantilever for mass sensing.
