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<p>The electronic properties can be effectively tuned by the polarization potential induced by mechanical non-uniform strain, which has been extensively investigated in traditional flexoelectric semiconductors. However, a giant non-uniform strain can be induced by a new type of non-uniform composites, and thus obtained the enhancement of the flexoelectronic effect. This work develops a one-dimensional continuum model of a FS PN nanometer core embedded within a functionally graded (FG) thick walled tube. By integrating strain gradient mechanics, flexoelectricity, and drift–diffusion physics, the model reveals how gradient index and geometry can control strain transfer and junction modulation, providing design principles for tunable, high-performance flexoelectronic devices. The proposed model accounts for the dependence of the band edge energies and the polarization potential on the non-uniform strain field. Closed-form solutions of distributions of relevant electromechanical coupling fields and carrier perturbation are obtained as well. By systematically analyzing parametric dependencies on the gradient index and flexoelectric coupling, the model establishes design principles for tailoring junction behavior in FG-FS systems. The results show that FG materials can effectively regulate the performance of the FS PN junction, and to a certain extent, can optimize the movement and redistribution of charge carriers in the model. The study not only clarifies the fundamental mechanisms of strain-gradient-driven modulation in flexoelectric semiconductors but also lays the groundwork for predictive optimization of next-generation flexoelectronic devices, bridging the gap between theoretical modeling and practical application.</p>

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Regulation of flexoelectric PN junction coupling performances via strain gradients engineered by functionally graded materials

  • 期刊论文

  • 发表日期：

    2026年4月20日

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  • Liangliang Chu,
  • Lin Ren,
  • Yurong Li,
  • Xiang Zhu

摘要

The electronic properties can be effectively tuned by the polarization potential induced by mechanical non-uniform strain, which has been extensively investigated in traditional flexoelectric semiconductors. However, a giant non-uniform strain can be induced by a new type of non-uniform composites, and thus obtained the enhancement of the flexoelectronic effect. This work develops a one-dimensional continuum model of a FS PN nanometer core embedded within a functionally graded (FG) thick walled tube. By integrating strain gradient mechanics, flexoelectricity, and drift–diffusion physics, the model reveals how gradient index and geometry can control strain transfer and junction modulation, providing design principles for tunable, high-performance flexoelectronic devices. The proposed model accounts for the dependence of the band edge energies and the polarization potential on the non-uniform strain field. Closed-form solutions of distributions of relevant electromechanical coupling fields and carrier perturbation are obtained as well. By systematically analyzing parametric dependencies on the gradient index and flexoelectric coupling, the model establishes design principles for tailoring junction behavior in FG-FS systems. The results show that FG materials can effectively regulate the performance of the FS PN junction, and to a certain extent, can optimize the movement and redistribution of charge carriers in the model. The study not only clarifies the fundamental mechanisms of strain-gradient-driven modulation in flexoelectric semiconductors but also lays the groundwork for predictive optimization of next-generation flexoelectronic devices, bridging the gap between theoretical modeling and practical application.