<p>In this work, hafnium diselenide (HfSe<sub>2</sub>)-based saturable absorbers (SA) were fabricated and applied for the modulation of Tm:YAP lasers. In continuous-wave mode, a 12.9 W laser diode was used to pump the Tm:YAP crystal, resulting in an output power of 2.35 W at 1996.2&#xa0;nm, corresponding to an optical-to-optical conversion efficiency of 19%. In passively Q-switched mode, the Tm:YAP laser modulated by the HfSe<sub>2</sub> SA achieved an average output power of 1.45 W, with a pulse width of 712.8&#xa0;ns and a pulse repetition frequency of 103.17&#xa0;kHz at a central wavelength of 1989.1&#xa0;nm. The corresponding optical-to-optical conversion efficiency was 11.2%, with a single-pulse energy of 14.1&#xa0;µJ and a peak power of 19.7 W. The rate equation was used to calculate the modulation depth (10%), saturation flux (1&#xa0;kJ/cm<sup>2</sup>), and unsaturated loss (0.0505).</p>

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HfSe2 as a saturable absorber for infrared passively Q-switched solid-state laser

  • Weifeng Zhong,
  • Zhiqiang Long,
  • Yiheng Yang,
  • Xiang Wang,
  • Amei Du,
  • Wen Yang,
  • Changhe Sun,
  • Ruijun Lan,
  • Yingjie Shen

摘要

In this work, hafnium diselenide (HfSe2)-based saturable absorbers (SA) were fabricated and applied for the modulation of Tm:YAP lasers. In continuous-wave mode, a 12.9 W laser diode was used to pump the Tm:YAP crystal, resulting in an output power of 2.35 W at 1996.2 nm, corresponding to an optical-to-optical conversion efficiency of 19%. In passively Q-switched mode, the Tm:YAP laser modulated by the HfSe2 SA achieved an average output power of 1.45 W, with a pulse width of 712.8 ns and a pulse repetition frequency of 103.17 kHz at a central wavelength of 1989.1 nm. The corresponding optical-to-optical conversion efficiency was 11.2%, with a single-pulse energy of 14.1 µJ and a peak power of 19.7 W. The rate equation was used to calculate the modulation depth (10%), saturation flux (1 kJ/cm2), and unsaturated loss (0.0505).