Semiconductor nanostructured metamaterial for tunable enhanced absorption

A nanostructured metamaterial absorber composed of alternating semiconductor and dielectric layers is presented and numerically analyzed in this article. The development of a semiconductor adjustable absorber in the THz will open up new possibilities for quantum information science, imaging, health, and sensing applications, particularly those that need to be portable. Here, we build a unique semiconductor nanostructured metamaterial that exhibits increased absorption efficiency at various temperatures by carefully organizing and shaping the nanostructured semiconductor metamaterial geometry. The stability of absorption properties is observed for a large range of the alternating layers width values. This discovery paves the way for the potential development of a new generation of THz quantum detectors that operate close to room temperature and offer exceptional improved absorption for a broader variety of applications.