Second-order electrogyration effect in BSO crystal

Using a non-holographic optical setup, we employed a Mueller–Stokes polarimeter to measure both the linear electro-optic and second-order electrogyration effects. The second-order electrogyration effect was observed in a \(Bi_{12}SiO_{20}\) $B{i}_{12}Si{O}_{20}$ (BSO) crystal with a (110) cut. This response was found for the electric field applied both parallel and perpendicular to the [001] direction, where the values for the second-order electrogyration are \(4.86\times 10^{7} \, \text {pm}^{2}/\text {V}^{2}\) $4.86\times {10}^7{\text{pm}}^2/{\text{V}}^2$ and \(1.87\times 10^{7} \, \text {pm}^{2}/\text {V}^{2}\) $1.87\times {10}^7{\text{pm}}^2/{\text{V}}^2$ , respectively. Additionally, the linear electro-optic coefficient \(\gamma _{41}\) ${\gamma }_{41}$ was measured to be \(1.17 \, \text {pm/V}\) $1.17\text{pm/V}$ for \(660.5 \, \text {nm}\) $660.5\text{nm}$ .