Study of 589nm GaInP quantum well semiconductor laser on Ge/SiGe substrate

Since there are few research reports on semiconductor lasers in the yellow wavelength, this manuscript proposes the design of a semiconductor laser with an excitation wavelength of 589 nm, using a Ge/SiGe substrate, combined with GaInP quantum wells with high Ga composition and AlGaInP series of materials as the main structural layer of the laser. Simulation software is used for feasibility verification, and the effects of different parameters are discussed to optimize the device structure. The effects of interfacial states and electron leakage on the device characteristics are discussed, and a solution to the electron leakage problem is given. The results show that under the influence of the interfacial state, the threshold current of the 589-nm laser reaches 3.3 A, and the output power is about 0.6 W. Through optimization, by adding two layers of AlP electron-blocking layer with a thickness of 5 nm between the P-type cladding and the upper waveguide layer, the concentration of electrons in the P-type cladding layer can be reduced to 1.53 × 10¹⁵ cm⁻³, the threshold current of the device is reduced to 2.13 A, and the output power reaches 0.87 W.