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<p>In this work, the H<sub>2</sub> gas sensing characteristics can be improved significantly by enhancing the effective exposure surface area and the surface reactivity of silicon carbide nitride (SiCN) nanoballs sensor. The porous silicon (P-Si) substrates were synthesized by the electrochemical anodization method at room temperature (RT). Here, we have fabricated SiCN nanoballs (NBs) on porous Si substrates via RF magnetron sputtering. SiCN NBs were decorated by Pd nanoparticles using magnetron sputtering method. The as prepared SiCN nanoballs were uniformly decorated with dispersed Pd nanoparticles on the sensor surface, resulting in a remarkable improvement of the surface reactivity. The H<sub>2</sub> gas sensing performance along with the sensing mechanism of the developed chemiresistive Pd/SiCN NBs sensor were discussed in detail under low detection level (2-200 ppm) at high working temperature regime (40–450&#xa0;°C). In addition, the main measurements such as selectivity, stability, and cyclability were also performed for practical device applications. Therefore, porous silicon (P-Si) substrates uncover a new scientific approach for fabrication of high temperature H<sub>2</sub> gas sensors.</p>

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Growth of Pd decorated SiCN nanoballs for high temperature hydrogen gas sensing applications

  • 期刊论文

  • 发表日期：

    2026年8月5日

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  • Narendra Singh,
  • Hans Kumar Singh,
  • Mamta Rawat,
  • Mukesh Kumar,
  • Vinay Kumar,
  • Arvind Kumar

摘要

In this work, the H2 gas sensing characteristics can be improved significantly by enhancing the effective exposure surface area and the surface reactivity of silicon carbide nitride (SiCN) nanoballs sensor. The porous silicon (P-Si) substrates were synthesized by the electrochemical anodization method at room temperature (RT). Here, we have fabricated SiCN nanoballs (NBs) on porous Si substrates via RF magnetron sputtering. SiCN NBs were decorated by Pd nanoparticles using magnetron sputtering method. The as prepared SiCN nanoballs were uniformly decorated with dispersed Pd nanoparticles on the sensor surface, resulting in a remarkable improvement of the surface reactivity. The H2 gas sensing performance along with the sensing mechanism of the developed chemiresistive Pd/SiCN NBs sensor were discussed in detail under low detection level (2-200 ppm) at high working temperature regime (40–450 °C). In addition, the main measurements such as selectivity, stability, and cyclability were also performed for practical device applications. Therefore, porous silicon (P-Si) substrates uncover a new scientific approach for fabrication of high temperature H2 gas sensors.