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<p>Broadband photodetection spanning the ultraviolet (UV) to near-infrared (NIR) regimes remains a critical challenge in metal-oxide optoelectronics. Existing devices are either confined to narrow spectral windows or rely on resource-intensive III-V semiconductors and toxic lead halide perovskites, necessitating the exploration of earth-abundant, non-toxic oxide alternatives. To address this gap, Cd-substituted Mg<sub>1+<i>x</i></sub>Cd<sub>x</sub>Fe<sub>2-2<i>x</i></sub>O<sub>4</sub> (<i>x</i> = 0.25) nanostructured thin films were fabricated via a rotating-magnetic-field-assisted drop-casting methodology and integrated with p-Si in a heterojunction configuration. This technique is considered a novel approach compared with other magnetic-field-assisted deposition methods (CVD- and PLAL-based approaches). The optical properties of the resulting pure and Cd-doped films were evaluated spectrophotometrically across the UV-vis-NIR range, and the electronic device parameters were extracted and analyzed in detail. The magnetic-field-assisted deposition produced compact, void-minimized Cd-doped ferrite films with a low root-mean-square surface roughness of 2.55&#xa0;nm, superior to that of their undoped counterparts. The fabricated heterojunction photodetector exhibited a broadband photoresponse under UV (190&#xa0;nm), blue (450&#xa0;nm), green (532&#xa0;nm), red (650&#xa0;nm), and NIR (808&#xa0;nm) illumination, with responsivity, detectivity, and external quantum efficiency comparable to those of state-of-the-art spinel ferrite and metal oxide photodetectors. These findings establish magnetic-field-assisted deposition as a promising fabrication strategy for high-performance, non-toxic oxide-based broadband photodetectors.</p>

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Broadband photodetection performance of magnetic field-directed grown Cd: MgFe2O4 nanostructured thin films

  • 期刊论文

  • 发表日期：

    2026年7月27日

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  • Ahmed M. El-Mahalawy,
  • Asmaa A. Marzouk,
  • H. Abdel-Khalek,
  • Shaimaa A. Habib,
  • Shehab E. Ali

摘要

Broadband photodetection spanning the ultraviolet (UV) to near-infrared (NIR) regimes remains a critical challenge in metal-oxide optoelectronics. Existing devices are either confined to narrow spectral windows or rely on resource-intensive III-V semiconductors and toxic lead halide perovskites, necessitating the exploration of earth-abundant, non-toxic oxide alternatives. To address this gap, Cd-substituted Mg1+xCdxFe2-2xO4 (x = 0.25) nanostructured thin films were fabricated via a rotating-magnetic-field-assisted drop-casting methodology and integrated with p-Si in a heterojunction configuration. This technique is considered a novel approach compared with other magnetic-field-assisted deposition methods (CVD- and PLAL-based approaches). The optical properties of the resulting pure and Cd-doped films were evaluated spectrophotometrically across the UV-vis-NIR range, and the electronic device parameters were extracted and analyzed in detail. The magnetic-field-assisted deposition produced compact, void-minimized Cd-doped ferrite films with a low root-mean-square surface roughness of 2.55 nm, superior to that of their undoped counterparts. The fabricated heterojunction photodetector exhibited a broadband photoresponse under UV (190 nm), blue (450 nm), green (532 nm), red (650 nm), and NIR (808 nm) illumination, with responsivity, detectivity, and external quantum efficiency comparable to those of state-of-the-art spinel ferrite and metal oxide photodetectors. These findings establish magnetic-field-assisted deposition as a promising fabrication strategy for high-performance, non-toxic oxide-based broadband photodetectors.