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<p>Magnesium oxide (MgO) thin films were grown on the glass substrates by chemical bath deposition method for different precursor concentration of the magnesium. The effect of varying precursor concentrations (0.1, 0.2, 0.3, 0.4 &amp; 0.5&#xa0;M) on the structural, morphological optical and electrical properties of the deposited thin films was systematically investigated. The XRD measurements confirmed the cubic crystal structure of MgO, exhibiting from the (002) and (220) planes. The crystallite size of the films was improved from 15&#xa0;nm to 21&#xa0;nm with precursor concentration. The SEM analysis confirmed uniform and dense grain morphology. The absorbance of the films varied and observed in ultraviolet region. The bandgap of the films reduced from 4.08&#xa0;eV to 3.65&#xa0;eV. The electrical conductivity of the films was improved with precursor concentration which can be used for optoelectronic devices.</p>

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Tailoring the optoelectronic properties of MgO thin films by chemical bath deposition technique

  • 期刊论文

  • 发表日期：

    2026年7月16日

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  • Pallavi S,
  • Ashith V K,
  • Sahana Nagappa Moger

摘要

Magnesium oxide (MgO) thin films were grown on the glass substrates by chemical bath deposition method for different precursor concentration of the magnesium. The effect of varying precursor concentrations (0.1, 0.2, 0.3, 0.4 & 0.5 M) on the structural, morphological optical and electrical properties of the deposited thin films was systematically investigated. The XRD measurements confirmed the cubic crystal structure of MgO, exhibiting from the (002) and (220) planes. The crystallite size of the films was improved from 15 nm to 21 nm with precursor concentration. The SEM analysis confirmed uniform and dense grain morphology. The absorbance of the films varied and observed in ultraviolet region. The bandgap of the films reduced from 4.08 eV to 3.65 eV. The electrical conductivity of the films was improved with precursor concentration which can be used for optoelectronic devices.