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<p>This manuscript presents the synthesis and investigation of the pure and Ga-doped TiO<sub>2</sub> thin films deposited using the spin-coating method on a quartz substrate. The sol-gel synthesis technique is utilised to get the gel of pure and Ga-doped TiO<sub>2</sub> nanoparticles. Furthermore, the investigation of the structural, morphological, optical, and electrical characteristics of the deposited samples is conducted using XRD, FTIR, AFM, FESEM, XPS, UV-Visible spectroscopy, and two-probe techniques. The deposited thin films exhibit the anatase phase of TiO<sub>2</sub>, having a tetragonal structure. The Debye-Scherrer formula has been used to calculate the average of the crystallite size values, which is estimated to be 15.066&#xa0;nm for pure TiO<sub>2</sub>. This value decreases to 12.937&#xa0;nm for the Ti<sub>0.90</sub>Ga<sub>0.10</sub>O<sub>2</sub> thin film. The AFM study reveals that the thickness of the pure TiO<sub>2</sub> thin film is 211.7&#xa0;nm. The UV-Visible spectroscopy reveals that the value of the energy band gap is 3.22&#xa0;eV for pure TiO<sub>2</sub>, which then decreases up to 2.87&#xa0;eV for the Ti<sub>0.90</sub>Ga<sub>0.10</sub>O<sub>2</sub> thin film sample. Additionally, all synthesized thin films are found to be highly transparent in nature. Furthermore, the current conduction mechanism in all deposited thin film samples has been studied in the temperature range 301–613&#xa0;K and the voltage range 0–70&#xa0;V, depicting a decrease in the resistivity value up to 9.93 ⋅ 10<sup>2</sup> ∧−cm at 613&#xa0;K from 2.23 ⋅ 10<sup>4</sup> ∧−cm at 301&#xa0;K for the Ti<sub>0.90</sub>Ga<sub>0.10</sub>O<sub>2</sub> thin film. Moreover, Ga³⁺ substitution for Ti⁴⁺ enables controlled conductivity improvement, significantly lowers the activation energy from 0.434&#xa0;eV (pure TiO₂) to 0.257&#xa0;eV (Ti<sub>0.90</sub>Ga<sub>0.10</sub>O<sub>2</sub>), resulting in a substantially reduced resistivity of 9.93 × 10² Ω·cm at 613&#xa0;K, while maintaining high optical transparency indicates its usage in optoelectronics as a semi-transparent and conducting electrode.</p>

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Impact of Ga3+ ion substitution on the structural, morphological, optical, and high-temperature dependent electrical behaviour of TiO2 thin films as a semi-transparent conducting material

  • 期刊论文

  • 发表日期：

    2026年7月14日

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  • Adesh Kumar,
  • Subhash Chand

摘要

This manuscript presents the synthesis and investigation of the pure and Ga-doped TiO2 thin films deposited using the spin-coating method on a quartz substrate. The sol-gel synthesis technique is utilised to get the gel of pure and Ga-doped TiO2 nanoparticles. Furthermore, the investigation of the structural, morphological, optical, and electrical characteristics of the deposited samples is conducted using XRD, FTIR, AFM, FESEM, XPS, UV-Visible spectroscopy, and two-probe techniques. The deposited thin films exhibit the anatase phase of TiO2, having a tetragonal structure. The Debye-Scherrer formula has been used to calculate the average of the crystallite size values, which is estimated to be 15.066 nm for pure TiO2. This value decreases to 12.937 nm for the Ti0.90Ga0.10O2 thin film. The AFM study reveals that the thickness of the pure TiO2 thin film is 211.7 nm. The UV-Visible spectroscopy reveals that the value of the energy band gap is 3.22 eV for pure TiO2, which then decreases up to 2.87 eV for the Ti0.90Ga0.10O2 thin film sample. Additionally, all synthesized thin films are found to be highly transparent in nature. Furthermore, the current conduction mechanism in all deposited thin film samples has been studied in the temperature range 301–613 K and the voltage range 0–70 V, depicting a decrease in the resistivity value up to 9.93 ⋅ 102 ∧−cm at 613 K from 2.23 ⋅ 104 ∧−cm at 301 K for the Ti0.90Ga0.10O2 thin film. Moreover, Ga³⁺ substitution for Ti⁴⁺ enables controlled conductivity improvement, significantly lowers the activation energy from 0.434 eV (pure TiO₂) to 0.257 eV (Ti0.90Ga0.10O2), resulting in a substantially reduced resistivity of 9.93 × 10² Ω·cm at 613 K, while maintaining high optical transparency indicates its usage in optoelectronics as a semi-transparent and conducting electrode.