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<p>Interfacial defects have been observed to play a crucial role in limiting both the efficiency and stability of perovskite solar cells (PSCs) by introducing non-radiative recombination, charge trapping, resistive losses and interfacial energy barriers. In this work, the photovoltaic performance and air stability of PSCs have been significantly improved through effective passivation of defect states at the perovskite interfaces. The PSCs were fabricated in inverted device architecture using two different hole transport layers (HTLs) viz. poly(ethylene-dioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA), while methyl ammonium lead iodide (MAPbI<sub>3</sub>) was employed as the light absorbing perovskite layer. Because of hydrophobic nature of PTAA, the PTAA film exhibited low wettability therefore growth of high quality perovskite film directly on the PTAA film was very difficult. To address this issue, poly[(9,9-bis(3′-(N, N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN-P1) has been used as interfacial modifier. PFN-P1 has also been used as passivating agent to neutralize the defects and traps on the surface of the perovskite film. PFN-P1, when used as interfacial modifier, enhanced the wettability of the PTAA film, thereby facilitating the growth of a compact and high-quality perovskite layer with fewer defects and pinholes compared to that on the PEDOT: PSS film. When used as passivating agent, PFN-P1 effectively neutralized the traps and defect states at the perovskite surface. Incorporation of PFN-P1 on both sides of the perovskite layer, resulted in high quality perovskite film with suppressed non-radiative recombination losses, enhanced charge extraction, and reduced resistive losses, leading to highly efficient and stable PSCs. The PSCs based on PEDOT: PSS HTL exhibited champion power conversion efficiency (PCE) of 12.05% and degraded to nearly 40% of their initial efficiency within ~ 5 days of dark storage. While, the PSCs employing PTAA HTL without perovskite surface passivation achieved a champion PCE of 16.13% and under dark storage they degraded to ~ 70% of their initial efficiency in ~ 27 days. In contrast, the PSCs incorporating PFN-P1-mediated PTAA HTL along with perovskite surface passivation by PFN-P1, delivered a champion PCE of 19.69% and retained more than 80% of their initial efficiency even after 44 days of dark storage.</p>

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Improved performance of perovskite solar cells via passivation of defects at the perovskite interfaces

  • 期刊论文

  • 发表日期：

    2026年7月13日

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  • Pankaj Kumar,
  • Priyanka Singh

摘要

Interfacial defects have been observed to play a crucial role in limiting both the efficiency and stability of perovskite solar cells (PSCs) by introducing non-radiative recombination, charge trapping, resistive losses and interfacial energy barriers. In this work, the photovoltaic performance and air stability of PSCs have been significantly improved through effective passivation of defect states at the perovskite interfaces. The PSCs were fabricated in inverted device architecture using two different hole transport layers (HTLs) viz. poly(ethylene-dioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA), while methyl ammonium lead iodide (MAPbI3) was employed as the light absorbing perovskite layer. Because of hydrophobic nature of PTAA, the PTAA film exhibited low wettability therefore growth of high quality perovskite film directly on the PTAA film was very difficult. To address this issue, poly[(9,9-bis(3′-(N, N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN-P1) has been used as interfacial modifier. PFN-P1 has also been used as passivating agent to neutralize the defects and traps on the surface of the perovskite film. PFN-P1, when used as interfacial modifier, enhanced the wettability of the PTAA film, thereby facilitating the growth of a compact and high-quality perovskite layer with fewer defects and pinholes compared to that on the PEDOT: PSS film. When used as passivating agent, PFN-P1 effectively neutralized the traps and defect states at the perovskite surface. Incorporation of PFN-P1 on both sides of the perovskite layer, resulted in high quality perovskite film with suppressed non-radiative recombination losses, enhanced charge extraction, and reduced resistive losses, leading to highly efficient and stable PSCs. The PSCs based on PEDOT: PSS HTL exhibited champion power conversion efficiency (PCE) of 12.05% and degraded to nearly 40% of their initial efficiency within ~ 5 days of dark storage. While, the PSCs employing PTAA HTL without perovskite surface passivation achieved a champion PCE of 16.13% and under dark storage they degraded to ~ 70% of their initial efficiency in ~ 27 days. In contrast, the PSCs incorporating PFN-P1-mediated PTAA HTL along with perovskite surface passivation by PFN-P1, delivered a champion PCE of 19.69% and retained more than 80% of their initial efficiency even after 44 days of dark storage.