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<p>In this work, an n- CuFe<sub>2</sub>O<sub>4</sub>/p-Si heterojunction photodetector was fabricated using a two step approach. First, copper ferrite powder was prepared by the sol-gel method, followed by deposition of nanostructured CuFe<sub>2</sub>O<sub>4</sub> thin films using pulsed laser deposition (PLD) at a substrate temperature of 150&#xa0;°C. The films were then annealed at 400&#xa0;°C for 3&#xa0;h, which improved the film properties and regulated oxygen vacancy related defect states. Hall effect measurements confirmed the n-type conductivity of the annealed CuFe<sub>2</sub>O<sub>4</sub> film. The electrical measurements showed rectifying behavior for the fabricated heterojunction, with an extracted Schottky barrier height of (0.74&#xa0;eV). Under visible light illumination, the device exhibited photosensitivity values in the range of 310–355%. This enhanced photoresponse can be attributed to the built-in electric field at the n- CuFe<sub>2</sub>O<sub>4</sub>/p-Si interface, which promotes the separation and transport of photogenerated carriers and reduces recombination losses. The nanostructured morphology of the CuFe<sub>2</sub>O<sub>4</sub> film also contributes to improved light absorption and carrier generation. These results indicate that oxygen vacancy assisted defect engineering in spinel ferrite thin films is a promising strategy for developing low cost and wide spectral optoelectronic photodetectors.</p>

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High-performance n-CuFe2O4/p-Si heterojunction photodetectors: Influence of oxygen vacancies and interface engineering on photosensitivity

  • 期刊论文

  • 发表日期：

    2026年7月7日

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  • Ahmed Yaseen,
  • Ziad T. Khodair,
  • Nadia Mohammed Jassim

摘要

In this work, an n- CuFe2O4/p-Si heterojunction photodetector was fabricated using a two step approach. First, copper ferrite powder was prepared by the sol-gel method, followed by deposition of nanostructured CuFe2O4 thin films using pulsed laser deposition (PLD) at a substrate temperature of 150 °C. The films were then annealed at 400 °C for 3 h, which improved the film properties and regulated oxygen vacancy related defect states. Hall effect measurements confirmed the n-type conductivity of the annealed CuFe2O4 film. The electrical measurements showed rectifying behavior for the fabricated heterojunction, with an extracted Schottky barrier height of (0.74 eV). Under visible light illumination, the device exhibited photosensitivity values in the range of 310–355%. This enhanced photoresponse can be attributed to the built-in electric field at the n- CuFe2O4/p-Si interface, which promotes the separation and transport of photogenerated carriers and reduces recombination losses. The nanostructured morphology of the CuFe2O4 film also contributes to improved light absorption and carrier generation. These results indicate that oxygen vacancy assisted defect engineering in spinel ferrite thin films is a promising strategy for developing low cost and wide spectral optoelectronic photodetectors.