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<p>A MHz burst-mode femtosecond laser was employed to examine how burst sub-pulse number influences internal modification and wafer dicing in thin n-type 4&#xa0;H-SiC. Single-pass line scanning was first used to evaluate the roles of laser power, scanning speed, and sub-pulse number in determining the morphology of the modified region. The results indicated that burst conditions with two sub-pulses tended to promote lateral crack formation, whereas increasing the sub-pulse number to 3–5 suppressed lateral cracking and produced a more confined modified structure. Based on these observations, multi-layer internal modification was further applied for dicing. A continuous diced section was obtained, and the resulting cross-section exhibited a surface roughness of Sa = 0.8&#xa0;μm. The findings demonstrate that the sub-pulse number is a key parameter governing crack formation, modified-layer geometry, and the feasibility of burst-mode femtosecond laser dicing of 4&#xa0;H-SiC wafers.</p>

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Femtosecond laser processing of n-type 4 H-SiC for internal modification and wafer dicing

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月13日

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  • Yi-Chen Wang,
  • Jia-Fan Kuo,
  • Chung-Wei Cheng

摘要

A MHz burst-mode femtosecond laser was employed to examine how burst sub-pulse number influences internal modification and wafer dicing in thin n-type 4 H-SiC. Single-pass line scanning was first used to evaluate the roles of laser power, scanning speed, and sub-pulse number in determining the morphology of the modified region. The results indicated that burst conditions with two sub-pulses tended to promote lateral crack formation, whereas increasing the sub-pulse number to 3–5 suppressed lateral cracking and produced a more confined modified structure. Based on these observations, multi-layer internal modification was further applied for dicing. A continuous diced section was obtained, and the resulting cross-section exhibited a surface roughness of Sa = 0.8 μm. The findings demonstrate that the sub-pulse number is a key parameter governing crack formation, modified-layer geometry, and the feasibility of burst-mode femtosecond laser dicing of 4 H-SiC wafers.