Graphene derivatives as HTLs for Cu2MgSnS4 based solar cells
摘要
A numerical investigation of Cu2MgSnS4 (CMTS)-based solar cells is carried out using wxAMPS-1D simulator. The work focuses on evaluating the impact of different hole transport layers, including graphene oxide GO, reduced graphene oxide RGO, and graphene quantum dots GQDs, in comparison with a conventional V2O5 configuration. The analysis emphasizes the role of valence band offset VBO in governing charge transport and interfacial recombination processes. The results indicate that RGO yields the highest performance among graphene-derived HTLs, exhibiting improved efficiency compared to the conventional V2O5-based device, while GO and GQDs show reduced performance associated with unfavorable VBO conditions. In addition, the study systematically investigates the influence of key device parameters such as the absorber and transport layer thicknesses, doping concentrations, defect density, operating temperature, and back contact materials. A sensitivity analysis reveals that the absorber defect density is the most influential parameter affecting device performance, followed by operating temperature. These results highlight the pivotal role of nanostructured interface engineering and defect control in optimizing charge transport and overall efficiency of CMTS-based solar cells.